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Kitabayashi, H., Waho, T., Yamamoto, M. (1997) Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs diodes with extremely thin AlSb barrier layers. Applied Physics Letters, 71 (4). 512-514 doi:10.1063/1.119594

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Reference TypeJournal (article/letter/editorial)
TitleResonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs diodes with extremely thin AlSb barrier layers
JournalApplied Physics Letters
AuthorsKitabayashi, H.Author
Waho, T.Author
Yamamoto, M.Author
Year1997 (July 28)Volume71
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.119594Search in ResearchGate
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Mindat Ref. ID8520293Long-form Identifiermindat:1:5:8520293:7
GUID0
Full ReferenceKitabayashi, H., Waho, T., Yamamoto, M. (1997) Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs diodes with extremely thin AlSb barrier layers. Applied Physics Letters, 71 (4). 512-514 doi:10.1063/1.119594
Plain TextKitabayashi, H., Waho, T., Yamamoto, M. (1997) Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs diodes with extremely thin AlSb barrier layers. Applied Physics Letters, 71 (4). 512-514 doi:10.1063/1.119594
In(1997, July) Applied Physics Letters Vol. 71 (4) AIP Publishing

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Kitabayashi, Hiroto, Waho, Takao, Yamamoto, Masafumi (1998) Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs double barrier diodes. Journal of Applied Physics, 84 (3). 1460-1466 doi:10.1063/1.368208
Kitabayashi, Hiroto, Waho, Takao, Yamamoto, Masafumi (1997) Dependence of Resonant Interband Tunneling Current on Barrier and Well Width in InAs/AlSb/GaSb/AlSb/InAs Double-Barrier Structures. Japanese Journal of Applied Physics, 36. 1807-1810 doi:10.1143/jjap.36.1807
Longenbach, K. F., Luo, L. F., Wang, W. I. (1990) Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures. Applied Physics Letters, 57 (15). 1554-1556 doi:10.1063/1.103351
Chen, J. F., Cho, A. Y. (1992) Interband tunneling between valenceā€band and conductionā€band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs tripleā€barrier structure. Journal of Applied Physics, 72 (3). 960-963 doi:10.1063/1.351772
Shen, Jun (1995) Mechanisms of valley currents in InAs/AlSb/GaSb resonant interband tunneling diodes. Journal of Applied Physics, 78 (10). 6220-6223 doi:10.1063/1.360568
Wagner, J., Schmitz, J., Obloh, H., Koidl, P. (1995) Compositional and structural analysis of AlSb(As) tunneling barriers in InAs/AlSb(As)/GaSb resonant interbandā€tunneling structures. Applied Physics Letters, 67 (20). 2963-2965 doi:10.1063/1.114826
Houng, M. P., Wang, Y. H., Shen, C. L., Chen, J. F., Cho, A. Y. (1992) Improvement of peakā€toā€valley ratio by the incorporation of the InAs layer into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure. Applied Physics Letters, 60 (6). 713-715 doi:10.1063/1.106546
Genoe, J., Fobelets, K., Van Hoof, C., Borghs, G. (1995) In-plane dispersion relations of InAs/AlSb/GaSb/AlSb/InAs interband resonant-tunneling diodes. Physical Review B, 52 (19) 14025-14034 doi:10.1103/physrevb.52.14025
Genoe, J., Fobelets, K., Van Hoof, C., Borghs, G. (1996) Erratum: In-plane dispersion relations of InAs/AlSb/GaSb/AlSb/InAs interband resonant-tunneling diodes. Physical Review B, 53 (19) 13194 doi:10.1103/physrevb.53.13194
Chen, J. F., Cho, A. Y. (1992) The effects of GaSb/InAs broken gap on interband tunneling current of a GaSb/InAs/GaSb/AlSb/InAs tunneling structure. Journal of Applied Physics, 71 (9). 4432-4435 doi:10.1063/1.350783
Liu, Meng Hwang, Wang, Yeong Her, Houng, Mau Phon (1994) Interband Tunneling Mechanisms and Effects of AlSb Center-Barrier Layer on Light Particle Coupling and Reverse I-V Characteristics of GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs Triple-Barrier Structures. Japanese Journal of Applied Physics, 33. 4506-4512 doi:10.1143/jjap.33.4506
 
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