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Hasan, Z., Solonenko, M., Macfarlane, P. I., Biyikli, L., Mathur, V. K., Karwacki, F. A. (1998) Persistent high density spectral holeburning in CaS:Eu and CaS:Eu,Sm phosphors. Applied Physics Letters, 72 (19). 2373-2375 doi:10.1063/1.121360

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Reference TypeJournal (article/letter/editorial)
TitlePersistent high density spectral holeburning in CaS:Eu and CaS:Eu,Sm phosphors
JournalApplied Physics Letters
AuthorsHasan, Z.Author
Solonenko, M.Author
Macfarlane, P. I.Author
Biyikli, L.Author
Mathur, V. K.Author
Karwacki, F. A.Author
Year1998 (May 11)Volume72
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.121360Search in ResearchGate
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Mindat Ref. ID8521000Long-form Identifiermindat:1:5:8521000:6
GUID0
Full ReferenceHasan, Z., Solonenko, M., Macfarlane, P. I., Biyikli, L., Mathur, V. K., Karwacki, F. A. (1998) Persistent high density spectral holeburning in CaS:Eu and CaS:Eu,Sm phosphors. Applied Physics Letters, 72 (19). 2373-2375 doi:10.1063/1.121360
Plain TextHasan, Z., Solonenko, M., Macfarlane, P. I., Biyikli, L., Mathur, V. K., Karwacki, F. A. (1998) Persistent high density spectral holeburning in CaS:Eu and CaS:Eu,Sm phosphors. Applied Physics Letters, 72 (19). 2373-2375 doi:10.1063/1.121360
In(1998, May) Applied Physics Letters Vol. 72 (19) AIP Publishing

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Hasan, Z., Biyikli, L., Macfarlane, P. I. (1998) Power-gated spectral holeburning in MgS:Eu2+, Eu3+: A case for high-density persistent spectral holeburning. Applied Physics Letters, 72 (26). 3399-3401 doi:10.1063/1.121677
Seyedahmadian, S.M, Aly, M.F, Biyikli, L, Park, J.L, Solonenko, M, Hasan, Z (1999) Inhomogeneous broadening and gated hole burning in MgS:Eu and CaS:Eu in polymethylmethacralate (PMMA) Journal of Luminescence, 83. 389-392 doi:10.1016/s0022-2313(99)00131-3
Hasan, Z., Biyikli, L. (1999) Photon-Gated Holeburning Materials: Directions in High Density Memory Storage. Materials Science Forum, 315. 51-58 doi:10.4028/www.scientific.net/msf.315-317.51
Tamura, Yasuaki, Shibukawa, Atsushi (1993) Optical Studies of CaS:Eu, Sm Infrared Stimulable Phosphors. Japanese Journal of Applied Physics, 32. 3187-3196 doi:10.1143/jjap.32.3187
Tanaka, K., Mikami, A., Ogura, T., Taniguchi, K., Yoshida, M., Nakajima, S. (1986) High brightness red electroluminescence in CaS:Eu thin films. Applied Physics Letters, 48 (25). 1730-1732 doi:10.1063/1.96817
Chen, C., Teo, K. L., Chong, T. C., Newman, D. M., Wu, J. P. (2005) Analysis of the thermal behavior of photoluminescent optical memory based on CaS:Eu,Sm media. Physical Review B, 72 (19) doi:10.1103/physrevb.72.195108
Mooney, P. M., Jordan‐Sweet, J. L., Ismail, K., Chu, J. O., Feenstra, R. M., LeGoues, F. K. (1995) Relaxed Si0.7Ge0.3 buffer layers for high‐mobility devices. Applied Physics Letters, 67 (16). 2373-2375 doi:10.1063/1.114349
Ando, M. (1992) Modulation of photoluminescent intensity by applying high electric field in doubly insulated CaS:Eu phosphor thin films. Applied Physics Letters, 60 (18). 2189-2191 doi:10.1063/1.107075
Kodama, Nobuhiro, Takahashi, Tomoko, Hirao, Kazuyuki (1998) Room-temperature persistent spectral hole burning in Sm-doped KLaF4 crystals. Applied Physics Letters, 72 (13). 1548-1549 doi:10.1063/1.120578
Han, Moonsup, Oh, S.‐J., Park, Jong Hee, Park, H. L. (1993) X‐ray photoelectron spectroscopy study of CaS:Eu and SrS:Eu phosphors. Journal of Applied Physics, 73 (9). 4546-4549 doi:10.1063/1.352799
Tamura, Yasuaki (1994) Concentration Quenching of Infrared Stimulated Luminescence in CaS:Eu,Sm. Japanese Journal of Applied Physics, 33. 4640-4646 doi:10.1143/jjap.33.4640
 
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