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Ono, Haruhiko, Ikarashi, Taeko, Ogura, Atsushi (1998) Infrared studies of silicon oxide formation in silicon wafers implanted with oxygen. Applied Physics Letters, 72 (22). 2853-2855 doi:10.1063/1.121479

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Reference TypeJournal (article/letter/editorial)
TitleInfrared studies of silicon oxide formation in silicon wafers implanted with oxygen
JournalApplied Physics Letters
AuthorsOno, HaruhikoAuthor
Ikarashi, TaekoAuthor
Ogura, AtsushiAuthor
Year1998 (June)Volume72
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.121479Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8521206Long-form Identifiermindat:1:5:8521206:8
GUID0
Full ReferenceOno, Haruhiko, Ikarashi, Taeko, Ogura, Atsushi (1998) Infrared studies of silicon oxide formation in silicon wafers implanted with oxygen. Applied Physics Letters, 72 (22). 2853-2855 doi:10.1063/1.121479
Plain TextOno, Haruhiko, Ikarashi, Taeko, Ogura, Atsushi (1998) Infrared studies of silicon oxide formation in silicon wafers implanted with oxygen. Applied Physics Letters, 72 (22). 2853-2855 doi:10.1063/1.121479
In(1998, June) Applied Physics Letters Vol. 72 (22) AIP Publishing

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Ono, Haruhiko, Ogura, Atsushi (2000) In- and out-diffusion of oxygen during the buried-oxide formation in oxygen-implanted silicon. Journal of Applied Physics, 87 (11). 7782-7787 doi:10.1063/1.373454
Ono, Haruhiko, Ikarashi, Taeko (1993) Ring‐distribution of oxygen precipitates in Czochralski silicon revealed by low‐temperature infrared absorption spectroscopy. Applied Physics Letters, 63 (24). 3303-3305 doi:10.1063/1.110181
Ono, Haruhiko, Ikarashi, Taeko, Ando, Koichi, Kitano, Tomohisa (1998) Infrared studies of transition layers at SiO2/Si interface. Journal of Applied Physics, 84 (11). 6064-6069 doi:10.1063/1.368917
Ono, Haruhiko, Ikarashi, Taeko, Kimura, Shigeru, Tanikawa, Akio (1995) Anomalous ring‐shaped distribution of oxygen precipitates in a Czochralski‐grown silicon crystal. Journal of Applied Physics, 78 (7). 4395-4400 doi:10.1063/1.359845
Ono, Haruhiko, Ikarashi, Taeko, Kimura, Shigeru, Tanikawa, Akio (1994) Preanneal effect on the ring‐shaped distribution of oxygen precipitates in Czochralski‐grown silicon. Journal of Applied Physics, 76 (1). 621-623 doi:10.1063/1.357059
Ono, Haruhiko, Koyanagi, Ken-ichi (1999) Formation of silicon–oxide layers at the interface between tantalum oxide and silicon substrate. Applied Physics Letters, 75 (22). 3521-3523 doi:10.1063/1.125375
Uedono, Akira, Chen, Zhi Quan, Ogura, Atsushi, Ono, Haruhiko, Suzuki, Ryoichi, Ohdaira, Toshiyuki, Mikado, Tomohisa (2001) Oxygen-related defects in low-dose separation-by-implanted oxygen wafers probed by monoenergetic positron beams. Journal of Applied Physics, 90 (12). 6026-6031 doi:10.1063/1.1415064
Ono, Haruhiko, Ikarashi, Taeko, Miura, Yoshinao, Hasegawa, Eiji, Ando, Koichi, Kitano, Tomohisa (1999) Bonding configurations of nitrogen absorption peak at 960 cm−1 in silicon oxynitride films. Applied Physics Letters, 74 (2). 203-205 doi:10.1063/1.123293
Ono, Haruhiko, Hosokawa, Yumiko, Ikarashi, Taeko, Shinoda, Keisuke, Ikarashi, Nobuyuki, Koyanagi, Ken-ichi, Yamaguchi, Hiromu (2001) Formation mechanism of interfacial Si–oxide layers during postannealing of Ta2O5/Si. Journal of Applied Physics, 89 (2). 995-1002 doi:10.1063/1.1334922
Kimura, Shigeru, Ono, Haruhiko, Ikarashi, Taeko, Ishikawa, Tetsuya (1993) Minute Strain Fields due to Vacancy Type Defects in a Rapidly Cooled Czochralski-Grown Silicon Crystal. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l1074
Uno, Takumi, Sato, Kuniyuki, Ogura, Atsushi, Ono, Haruhiko (2016) Oxygen precipitates distributed around random grain boundaries in a cast-grown multicrystalline silicon crystal. Japanese Journal of Applied Physics, 55 (4) 41302 doi:10.7567/jjap.55.041302
 
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