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Hogg, R. A., Suzuki, K., Tachibana, K., Finger, L., Hirakawa, K., Arakawa, Y. (1998) Optical spectroscopy of self-assembled type II GaSb/GaAs quantum dot structures grown by molecular beam epitaxy. Applied Physics Letters, 72 (22). 2856-2858 doi:10.1063/1.121480

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Reference TypeJournal (article/letter/editorial)
TitleOptical spectroscopy of self-assembled type II GaSb/GaAs quantum dot structures grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsHogg, R. A.Author
Suzuki, K.Author
Tachibana, K.Author
Finger, L.Author
Hirakawa, K.Author
Arakawa, Y.Author
Year1998 (June)Volume72
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.121480Search in ResearchGate
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Mindat Ref. ID8521207Long-form Identifiermindat:1:5:8521207:7
GUID0
Full ReferenceHogg, R. A., Suzuki, K., Tachibana, K., Finger, L., Hirakawa, K., Arakawa, Y. (1998) Optical spectroscopy of self-assembled type II GaSb/GaAs quantum dot structures grown by molecular beam epitaxy. Applied Physics Letters, 72 (22). 2856-2858 doi:10.1063/1.121480
Plain TextHogg, R. A., Suzuki, K., Tachibana, K., Finger, L., Hirakawa, K., Arakawa, Y. (1998) Optical spectroscopy of self-assembled type II GaSb/GaAs quantum dot structures grown by molecular beam epitaxy. Applied Physics Letters, 72 (22). 2856-2858 doi:10.1063/1.121480
In(1998, June) Applied Physics Letters Vol. 72 (22) AIP Publishing

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Suzuki, K., Hogg, R. A., Arakawa, Y. (1999) Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy. Journal of Applied Physics, 85 (12). 8349-8352 doi:10.1063/1.370622
Suzuki, Kenji, Hogg, Richard A., Tachibana, Koichi, Arakawa, Yasuhiko (1998) Density Control of GaSb/GaAs Self-assembled Quantum Dots (∼25nm) Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l203
Suzuki, K., Arakawa, Y. (1999) Growth of stacked GaSb/GaAs self-assembled quantum dots by molecular beam epitaxy. Journal of Crystal Growth, 201. 1205-1208 doi:10.1016/s0022-0248(99)00021-4
Toda, Y., Shinomori, S., Suzuki, K., Arakawa, Y. (1998) Near-field magneto-optical spectroscopy of single self-assembled InAs quantum dots. Applied Physics Letters, 73 (4). 517-519 doi:10.1063/1.121919
Ishida, S., Arakawa, Y., Wada, K. (1998) Seeded self-assembled GaAs quantum dots grown in two-dimensional V grooves by selective metal–organic chemical-vapor deposition. Applied Physics Letters, 72 (7). 800-802 doi:10.1063/1.120897
Yamanaka, K., Suzuki, K., Ishida, S., Arakawa, Y. (1998) Light emission from individual self-assembled InAs/GaAs quantum dots excited by tunneling current injection. Applied Physics Letters, 73 (11). 1460-1462 doi:10.1063/1.122174
Kumagai, N., Watanabe, K., Nakata, Y., Arakawa, Y. (2007) Optical properties of p-type modulation-doped InAs quantum dot structures grown by molecular beam epitaxy. Journal of Crystal Growth, 301. 805-808 doi:10.1016/j.jcrysgro.2006.11.124
Tachibana, K., Someya, T., Arakawa, Y. (1999) Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition. Applied Physics Letters, 74 (3). 383-385 doi:10.1063/1.123078
Sakamoto, N., Hirakawa, K., Ikoma, T. (1995) Conduction‐type conversion in Si‐doped (311)A GaAs grown by molecular beam epitaxy. Applied Physics Letters, 67 (10). 1444-1446 doi:10.1063/1.114521
Miyamura, M., Tachibana, K., Arakawa, Y. (2002) High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition. Applied Physics Letters, 80 (21). 3937-3939 doi:10.1063/1.1482416
Liu, C. Y., Yoon, S. F., Sun, Z. Z., Yew, K. C. (2006) High-temperature operation of self-assembled GaInNAs∕GaAsN quantum-dot lasers grown by solid-source molecular-beam epitaxy. Applied Physics Letters, 88 (8). 81105pp. doi:10.1063/1.2178231
 
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