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Liu, Wen-Chau, Cheng, Shiou-Ying, Chang, Wen-Lung, Pan, Hsi-Jen, Shie, Yung-Hsin (1998) Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors. Applied Physics Letters, 73 (10). 1397-1399 doi:10.1063/1.121956

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Reference TypeJournal (article/letter/editorial)
TitleApplication of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors
JournalApplied Physics Letters
AuthorsLiu, Wen-ChauAuthor
Cheng, Shiou-YingAuthor
Chang, Wen-LungAuthor
Pan, Hsi-JenAuthor
Shie, Yung-HsinAuthor
Year1998 (September 7)Volume73
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.121956Search in ResearchGate
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Mindat Ref. ID8521757Long-form Identifiermindat:1:5:8521757:7
GUID0
Full ReferenceLiu, Wen-Chau, Cheng, Shiou-Ying, Chang, Wen-Lung, Pan, Hsi-Jen, Shie, Yung-Hsin (1998) Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors. Applied Physics Letters, 73 (10). 1397-1399 doi:10.1063/1.121956
Plain TextLiu, Wen-Chau, Cheng, Shiou-Ying, Chang, Wen-Lung, Pan, Hsi-Jen, Shie, Yung-Hsin (1998) Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors. Applied Physics Letters, 73 (10). 1397-1399 doi:10.1063/1.121956
In(1998, September) Applied Physics Letters Vol. 73 (10) AIP Publishing

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