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Cho, Yong-Hoon, Song, J. J., Lim, H., Choe, Byung-Doo, Lee, J. I., Kim, D. (1998) Erratum: “Recombination dynamics in n-AlxGa1−xAs/n-In0.5Ga0.5P type-II heterostructures” [Appl. Phys. Lett. 73, 1245 (1998)]. Applied Physics Letters, 73 (15). 2219 doi:10.1063/1.122431

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Reference TypeJournal (article/letter/editorial)
TitleErratum: “Recombination dynamics in n-AlxGa1−xAs/n-In0.5Ga0.5P type-II heterostructures” [Appl. Phys. Lett. 73, 1245 (1998)]
JournalApplied Physics Letters
AuthorsCho, Yong-HoonAuthor
Song, J. J.Author
Lim, H.Author
Choe, Byung-DooAuthor
Lee, J. I.Author
Kim, D.Author
Year1998 (October 12)Volume73
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.122431Search in ResearchGate
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Mindat Ref. ID8522041Long-form Identifiermindat:1:5:8522041:0
GUID0
Full ReferenceCho, Yong-Hoon, Song, J. J., Lim, H., Choe, Byung-Doo, Lee, J. I., Kim, D. (1998) Erratum: “Recombination dynamics in n-AlxGa1−xAs/n-In0.5Ga0.5P type-II heterostructures” [Appl. Phys. Lett. 73, 1245 (1998)]. Applied Physics Letters, 73 (15). 2219 doi:10.1063/1.122431
Plain TextCho, Yong-Hoon, Song, J. J., Lim, H., Choe, Byung-Doo, Lee, J. I., Kim, D. (1998) Erratum: “Recombination dynamics in n-AlxGa1−xAs/n-In0.5Ga0.5P type-II heterostructures” [Appl. Phys. Lett. 73, 1245 (1998)]. Applied Physics Letters, 73 (15). 2219 doi:10.1063/1.122431
In(1998, October) Applied Physics Letters Vol. 73 (15) AIP Publishing

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Cho, Yong-Hoon, Song, J. J., Lim, H., Choe, Byung-Doo, Lee, J. I., Kim, D. (1998) Recombination dynamics in n-AlxGa1−xAs/n-In0.5Ga0.5P type-II heterostructures. Applied Physics Letters, 73 (9). 1245-1247 doi:10.1063/1.122369
Cho, Yong-Hoon, Choe, Byung-Doo, Kim, Y., Lim, H. (1997) Interface states in In0.5Ga0.5P/AlxGa1−xAs heterostructures grown by liquid phase epitaxy. Journal of Applied Physics, 81 (11). 7362-7366 doi:10.1063/1.365334
Kim, Il‐Jong, Cho, Yong‐Hoon, Kim, Kwan‐Shik, Choe, Byung‐Doo, Lim, H. (1996) Band line‐up transition in AlxGa1−xAs/In0.5Ga0.5P from capacitance‐voltage analysis. Applied Physics Letters, 68 (24). 3488-3490 doi:10.1063/1.115767
Kim, Kwan‐Shik, Cho, Yong‐Hoon, Choe, Byung‐Doo, Jeong, Weon Guk, Lim, H. (1995) Determination of Al mole fraction for null conduction band offset in In0.5Ga0.5P/AlxGa1−xAs heterojunction by photoluminescence measurement. Applied Physics Letters, 67 (12). 1718-1720 doi:10.1063/1.115027
Kim, Kwan‐Shik, Lee, Jong Boong, Choe, Byung‐Doo, Jeong, Weon Guk, Lim, H. (1994) Photoluminescence of a staggered In0.5Ga0.5P/AlxGa1−xAs heterojunction. Applied Physics Letters, 65 (4). 451-453 doi:10.1063/1.112330
Woicik, J. C., Gupta, J. A., Watkins, S. P., Crozier, E. D. (1998) Erratum: “Bond-length strain in buried Ga1−xInxAs thin alloy films grown coherently on InP(001)” [Appl. Phys. Lett. 73, 1269 (1998)]. Applied Physics Letters, 73 (15). 2219 doi:10.1063/1.122433
Cho, Yong-Hoon, Kim, D. S., Choe, Byung-Doo, Lim, H., Lee, J. I., Kim, D. (1997) Dynamics of anti-Stokes photoluminescence in type-IIAlxGa1−xAs−GaInP2heterostructures: The important role of long-lived carriers near the interface. Physical Review B, 56 (8) doi:10.1103/physrevb.56.r4375
Kim, M. G., Kwon, S. D., Kim, C. H., Lee, J. B., Choe, Byung‐Doo, Lim, H. (1993) Characteristics of electron traps in In0.5Ga0.5P generated by recombination enhanced defect reactions. Applied Physics Letters, 63 (10). 1366-1368 doi:10.1063/1.109678
Beyer, T., Tacke, M. (1998) Erratum: “Antireflection coatings for PbSe diode lasers” [Appl. Phys. Lett. 73, 1191 (1998)]. Applied Physics Letters, 73 (15). 2218 doi:10.1063/1.122430
Rüdiger, U., Yu, J., Kent, A. D., Parkin, S. S. P. (1998) Erratum: “Magnetoresistance due to domain walls in an epitaxial microfabricated Fe wire” [Appl. Phys. Lett. 73, 1298 (1998)]. Applied Physics Letters, 73 (15). 2220 doi:10.1063/1.122435
Cho, Yong‐Hoon, Kim, Kwan‐Shik, Ryu, Sang‐Wan, Kim, Sang‐Ku, Choe, Byung‐Doo, Lim, H. (1995) Determination of the conduction‐band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis. Applied Physics Letters, 66 (14). 1785-1787 doi:10.1063/1.113321
 
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