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Dries, J. Christopher, Gokhale, Milind R., Thomson, K. John, Forrest, Stephen R., Hull, Robert (1998) Strain compensated In1−xGaxAs(x<0.47) quantum well photodiodes for extended wavelength operation. Applied Physics Letters, 73 (16). 2263-2265 doi:10.1063/1.121696

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Reference TypeJournal (article/letter/editorial)
TitleStrain compensated In1−xGaxAs(x<0.47) quantum well photodiodes for extended wavelength operation
JournalApplied Physics Letters
AuthorsDries, J. ChristopherAuthor
Gokhale, Milind R.Author
Thomson, K. JohnAuthor
Forrest, Stephen R.Author
Hull, RobertAuthor
Year1998 (October 19)Volume73
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.121696Search in ResearchGate
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Mindat Ref. ID8522066Long-form Identifiermindat:1:5:8522066:9
GUID0
Full ReferenceDries, J. Christopher, Gokhale, Milind R., Thomson, K. John, Forrest, Stephen R., Hull, Robert (1998) Strain compensated In1−xGaxAs(x<0.47) quantum well photodiodes for extended wavelength operation. Applied Physics Letters, 73 (16). 2263-2265 doi:10.1063/1.121696
Plain TextDries, J. Christopher, Gokhale, Milind R., Thomson, K. John, Forrest, Stephen R., Hull, Robert (1998) Strain compensated In1−xGaxAs(x
In(1998, October) Applied Physics Letters Vol. 73 (16) AIP Publishing

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Dries, J. Christopher, Gokhale, Milind R., Forrest, Stephen R. (1999) A 2.0 μm cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells. Applied Physics Letters, 74 (18). 2581-2583 doi:10.1063/1.123904
Gokhale, Milind R., Wei, Jian, Wang, Hongsheng, Forrest, Stephen R. (1999) Growth and characterization of small band gap (∼0.6 eV) InGaAsN layers on InP. Applied Physics Letters, 74 (9). 1287-1289 doi:10.1063/1.123526
Wei, Jian, Gokhale, Milind R, R. Forrest, Stephen (1999) Growth of thallium containing III–V materials by gas-source molecular beam epitaxy. Journal of Crystal Growth, 203 (3). 302-308 doi:10.1016/s0022-0248(99)00123-2
Hull, John R., Leacock, Robert A., McClelland, John F. (1984) Malvern K. Iles. Physics Today, 37. 122-123 doi:10.1063/1.2915948
Weihofen, R., Weiser, G., Starck, Ch., Simes, R. J. (1995) Energy gaps in strainedIn1−xGaxAs/In1−yGayAszP1−zquantum wells grown on (001) InP. Physical Review B, 51 (7) 4296-4305 doi:10.1103/physrevb.51.4296
Bacher, F. R. (1988) Characterization of deep‐level defects in In1−xGaxAs/InP. Journal of Applied Physics, 64 (2). 708-712 doi:10.1063/1.341965
Wisch, J., Chu, R. (2020) Exploring benefits of composition grading for forward-IV characteristics of In1−xGaxAs LEDs for cryogenic applications. Journal of Applied Physics, 128 (17) 175701pp. doi:10.1063/5.0013996
Varjas, Christopher J., Powell, Douglas R., Thomson, Robert K. (2015) Rapid Access to an Oxido-Alkylidene Complex of Mo(VI). Organometallics, 34. 4806-4809 doi:10.1021/acs.organomet.5b00686
Shin, H. K., Lockwood, D. J., Lacelle, C., Poole, P. J. (2000) Phonons in strained In1−xGaxAs/InP epilayers. Journal of Applied Physics, 88 (11). 6423-6428 doi:10.1063/1.1324698
Donovan, Stephen K., Paul, Christopher R. C. - Eds. (1998) The Adequacy of the Fossil Record. Wiley, Chichester.
Hitchens, W. R., Holonyak, N., Wright, P. D., Coleman, J. J. (1975) Low‐threshold LPE In1−x′Gax′P1−z′Asz′/In1−xGaxP1−zAsz/In1−x′Gax′P1−z′Asz′yellow double‐heterojunction laser diodes (J<104A/cm2, λ∼5850 Å, 77 °K). Applied Physics Letters, 27 (4). 245-247 doi:10.1063/1.88410
 
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