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Brown, S. A., Reeves, R. J., Haase, C. S., Cheung, R., Kirchner, C., Kamp, M. (1999) Reactive-ion-etched gallium nitride: Metastable defects and yellow luminescence. Applied Physics Letters, 75 (21). 3285-3287 doi:10.1063/1.125326

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Reference TypeJournal (article/letter/editorial)
TitleReactive-ion-etched gallium nitride: Metastable defects and yellow luminescence
JournalApplied Physics Letters
AuthorsBrown, S. A.Author
Reeves, R. J.Author
Haase, C. S.Author
Cheung, R.Author
Kirchner, C.Author
Kamp, M.Author
Year1999 (November 22)Volume75
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.125326Search in ResearchGate
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Mindat Ref. ID8525058Long-form Identifiermindat:1:5:8525058:1
GUID0
Full ReferenceBrown, S. A., Reeves, R. J., Haase, C. S., Cheung, R., Kirchner, C., Kamp, M. (1999) Reactive-ion-etched gallium nitride: Metastable defects and yellow luminescence. Applied Physics Letters, 75 (21). 3285-3287 doi:10.1063/1.125326
Plain TextBrown, S. A., Reeves, R. J., Haase, C. S., Cheung, R., Kirchner, C., Kamp, M. (1999) Reactive-ion-etched gallium nitride: Metastable defects and yellow luminescence. Applied Physics Letters, 75 (21). 3285-3287 doi:10.1063/1.125326
In(1999, November) Applied Physics Letters Vol. 75 (21) AIP Publishing

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Cheung, R., Withanage, S., Reeves, R. J., Brown, S. A., Ben-Yaacov, I., Kirchner, C., Kamp, M. (1999) Reactive ion etch-induced effects on the near-band-edge luminescence in GaN. Applied Physics Letters, 74 (21). 3185-3187 doi:10.1063/1.124101
Cheung, R., Reeves, R. J., Brown, S. A., van der Drift, E., Kamp, M. (2000) Effects of dry processing on the optical properties of GaN. Journal of Applied Physics, 88 (12). 7110-7114 doi:10.1063/1.1328780
Basak, D., Lachab, M., Nakanishi, T., Sakai, S. (1999) Effect of reactive ion etching on the yellow luminescence of GaN. Applied Physics Letters, 75 (23). 3710-3712 doi:10.1063/1.125437
Wang, V. S., Matyi, R. J., Nordheden, K. J. (1994) Triple‐crystal x‐ray diffraction analysis of reactive ion etched gallium arsenide. Journal of Applied Physics, 75 (8). 3835-3841 doi:10.1063/1.356062
Wei, L. C., Lang, E., Flynn, C. P., Averback, R. S. (1999) Freely migrating defects in ion-irradiated Cu3Au. Applied Physics Letters, 75 (6). 805-807 doi:10.1063/1.124519
Bischoff, D., KrÀhenmann, T., Dröscher, S., Gruner, M. A., Barraud, C., Ihn, T., Ensslin, K. (2012) Reactive-ion-etched graphene nanoribbons on a hexagonal boron nitride substrate. Applied Physics Letters, 101 (20). 203103pp. doi:10.1063/1.4765345
Venezia, V. C., Brown, R. A., Kalyanaraman, R., Haynes, T. E., Holland, O. W., Williams, J. S. (2000) Comment on “Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon” [Appl. Phys. Lett. 75, 1279 (1999)]. Applied Physics Letters, 77 (1). 151-152 doi:10.1063/1.126906
Taylor, C. A., Brown, S. W., Subramaniam, V., Kidner, S., Rand, S. C., Clarke, R. (1994) Observation of near‐band‐gap luminescence from boron nitride films. Applied Physics Letters, 65 (10). 1251-1253 doi:10.1063/1.112086
Kirchner, C., Schwegler, V., Eberhard, F., Kamp, M., Ebeling, K. J., Kornitzer, K., Ebner, T., Thonke, K., Sauer, R., Prystawko, P., Leszczynski, M., Grzegory, I., Porowski, S. (1999) Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology. Applied Physics Letters, 75 (8). 1098-1100 doi:10.1063/1.124609
Tan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J., Zolper, J. C., Stall, R. A. (1998) Annealing of ion implanted gallium nitride. Applied Physics Letters, 72 (10). 1190-1192 doi:10.1063/1.121030
Muensit, S., Goldys, E. M., Guy, I. L. (1999) Shear piezoelectric coefficients of gallium nitride and aluminum nitride. Applied Physics Letters, 75 (25). 3965-3967 doi:10.1063/1.125508
 
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