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Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., Jin, C., Kvit, A., Kolbas, R. M., Holland, O. W. (1999) Optical and structural properties of epitaxial MgxZn1−xO alloys. Applied Physics Letters, 75 (21). 3327-3329 doi:10.1063/1.125340

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Reference TypeJournal (article/letter/editorial)
TitleOptical and structural properties of epitaxial MgxZn1−xO alloys
JournalApplied Physics Letters
AuthorsSharma, A. K.Author
Narayan, J.Author
Muth, J. F.Author
Teng, C. W.Author
Jin, C.Author
Kvit, A.Author
Kolbas, R. M.Author
Holland, O. W.Author
Year1999 (November 22)Volume75
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.125340Search in ResearchGate
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Mindat Ref. ID8525072Long-form Identifiermindat:1:5:8525072:1
GUID0
Full ReferenceSharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., Jin, C., Kvit, A., Kolbas, R. M., Holland, O. W. (1999) Optical and structural properties of epitaxial MgxZn1−xO alloys. Applied Physics Letters, 75 (21). 3327-3329 doi:10.1063/1.125340
Plain TextSharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., Jin, C., Kvit, A., Kolbas, R. M., Holland, O. W. (1999) Optical and structural properties of epitaxial MgxZn1−xO alloys. Applied Physics Letters, 75 (21). 3327-3329 doi:10.1063/1.125340
In(1999, November) Applied Physics Letters Vol. 75 (21) AIP Publishing

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Teng, C. W., Muth, J. F., Özgür, Ü., Bergmann, M. J., Everitt, H. O., Sharma, A. K., Jin, C., Narayan, J. (2000) Refractive indices and absorption coefficients of MgxZn1−xO alloys. Applied Physics Letters, 76 (8). 979-981 doi:10.1063/1.125912
Hassan, K. M., Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., Kolbas, R. M. (1999) Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition. Applied Physics Letters, 75 (9). 1222-1224 doi:10.1063/1.124648
Teng, C. W., Muth, J. F., Kolbas, R. M., Hassan, K. M., Sharma, A. K., Kvit, A., Narayan, J. (2000) Quantum confinement of E1 and E2 transitions in Ge quantum dots embedded in an Al2O3 or an AlN matrix. Applied Physics Letters, 76 (1). 43-45 doi:10.1063/1.125650
Bergmann, M. J., Özgür, Ü., Casey, H. C., Muth, J. F., Chang, Y. C., Kolbas, R. M., Rao, R. A., Eom, C. B., Schurman, M. (1999) Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer. Applied Physics Letters, 74 (21). 3188-3190 doi:10.1063/1.124102
Muth, J. F., Kolbas, R. M., Sharma, A. K., Oktyabrsky, S., Narayan, J. (1999) Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition. Journal of Applied Physics, 85 (11). 7884-7887 doi:10.1063/1.370601
Teng, C. W., Aboelfotoh, M. O., Davis, R. F., Muth, J. F., Kolbas, R. M. (2001) Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers. Applied Physics Letters, 78 (12). 1688-1690 doi:10.1063/1.1353836
Wei, Wei, Jin, Chunming, Narayan, Jagdish, Narayan, Roger J. (2010) Optical and electrical properties of gallium-doped MgxZn1−xO. Journal of Applied Physics, 107 (1). 13510pp. doi:10.1063/1.3271415
Tiwari, Ashutosh, Narayan, J., Jin, C., Kvit, A. (2002) Growth of epitaxial NdNiO3 and integration with Si(100). Applied Physics Letters, 80 (8). 1337-1339 doi:10.1063/1.1451984
Shmagin, I. K., Muth, J. F., Lee, J. H., Kolbas, R. M., Balkas, C. M., Sitar, Z., Davis, R. F. (1997) Optical metastability in bulk GaN single crystals. Applied Physics Letters, 71 (4). 455-457 doi:10.1063/1.119577
Shmagin, I. K., Muth, J. F., Kolbas, R. M., Mack, M. P., Abare, A. C., Keller, S., Coldren, L. A., Mishra, U. K., DenBaars, S. P. (1997) Reconfigurable optical properties in InGaN/GaN quantum wells. Applied Physics Letters, 71 (11). 1455-1457 doi:10.1063/1.119935
Sharma, A. K., Narayan, J., Jin, C., Kvit, A., Chattopadhyay, S., Lee, C. (2000) Integration of Pb(Zr0.52Ti0.48)O3 epilayers with Si by domain epitaxy. Applied Physics Letters, 76 (11). 1458-1460 doi:10.1063/1.126063
 
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