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Ingerly, D. B., Chen, Y., William, R. S., Takeuchi, T., Chang, Y. A. (2000) Low resistance ohmic contacts to n-GaN and n-AlGaN using NiAl. Applied Physics Letters, 77 (3). 382-384 doi:10.1063/1.126983

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Reference TypeJournal (article/letter/editorial)
TitleLow resistance ohmic contacts to n-GaN and n-AlGaN using NiAl
JournalApplied Physics Letters
AuthorsIngerly, D. B.Author
Chen, Y.Author
William, R. S.Author
Takeuchi, T.Author
Chang, Y. A.Author
Year2000 (July 17)Volume77
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.126983Search in ResearchGate
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Mindat Ref. ID8528072Long-form Identifiermindat:1:5:8528072:2
GUID0
Full ReferenceIngerly, D. B., Chen, Y., William, R. S., Takeuchi, T., Chang, Y. A. (2000) Low resistance ohmic contacts to n-GaN and n-AlGaN using NiAl. Applied Physics Letters, 77 (3). 382-384 doi:10.1063/1.126983
Plain TextIngerly, D. B., Chen, Y., William, R. S., Takeuchi, T., Chang, Y. A. (2000) Low resistance ohmic contacts to n-GaN and n-AlGaN using NiAl. Applied Physics Letters, 77 (3). 382-384 doi:10.1063/1.126983
In(2000, July) Applied Physics Letters Vol. 77 (3) AIP Publishing

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Ingerly, D. B., Chang, Y. A., Perkins, N. R., Kuech, T. F. (1997) Ohmic contacts ton-GaN using PtIn2. Applied Physics Letters, 70 (1). 108-110 doi:10.1063/1.119277
Ingerly, D. B., Chang, Y. A., Chen, Y. (1999) The electrical behavior of Pt3In7 and NiIn contacts to p-GaN. Applied Physics Letters, 74 (17). 2480-2482 doi:10.1063/1.124168
Chu, Chen-Fu, Yu, C. C., Wang, Y. K., Tsai, J. Y., Lai, F. I., Wang, S. C. (2000) Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization. Applied Physics Letters, 77 (21). 3423-3425 doi:10.1063/1.1327276
Chen, D. Y., Chang, Y. A., Swenson, D. (1996) PtIn2 ohmic contacts to n‐GaAs via an In‐Ga exchange mechanism. Applied Physics Letters, 68 (1). 96-98 doi:10.1063/1.116783
Li, Y.-L., Schubert, E. F., Graff, J. W., Osinsky, A., Schaff, W. F. (2000) Low-resistance ohmic contacts to p-type GaN. Applied Physics Letters, 76 (19). 2728-2730 doi:10.1063/1.126457
Youn, Chang-Joo, Kang, Kwang-Yong (2000) Low-Resistance Ohmic Contacts to AlGaN/GaN Heterostructure Using Si/Ti/Al/Cu/Au Multilayer Metal Scheme. Japanese Journal of Applied Physics, 39. 3955-3956 doi:10.1143/jjap.39.3955
Hajłasz, M., Donkers, J. J. T. M., Sque, S. J., Heil, S. B. S., Gravesteijn, D. J., Rietveld, F. J. R., Schmitz, J. (2014) Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures. Applied Physics Letters, 104 (24). 242109pp. doi:10.1063/1.4884416
Miller, M. A., Mohney, S. E. (2007) V∕Al∕V∕Ag Ohmic contacts to n-AlGaN∕GaN heterostructures with a thin GaN cap. Applied Physics Letters, 91 (1). 12103pp. doi:10.1063/1.2753497
Chen, C.‐P., Chang, Y. A., Kuech, T. F. (1994) Schottky enhancement of reacted NiAl/n‐GaAs contacts. Applied Physics Letters, 64 (25). 3485-3487 doi:10.1063/1.111248
Qiao, D., Guan, Z. F., Carlton, J., Lau, S. S., Sullivan, G. J. (1999) Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the “advancing” Al/Ti metallization. Applied Physics Letters, 74 (18). 2652-2654 doi:10.1063/1.123927
Reddy, V.R., Kim, S.-H., Seong, T.-Y. (2005) Formation of thermally stable low-resistance Ti/W/Au ohmic contacts on n-type GaN. Applied Physics A, 81. 561-564 doi:10.1007/s00339-004-2673-3
 
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