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Huang, C. J., Li, D. Z., Yu, Z., Cheng, B. W., Yu, J. Z., Wang, Q. M. (2000) Atomic-force-microscopy investigation of the formation and evolution of Ge islands on GexSi1−x strained layers. Applied Physics Letters, 77 (3). 391-393 doi:10.1063/1.126986

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Reference TypeJournal (article/letter/editorial)
TitleAtomic-force-microscopy investigation of the formation and evolution of Ge islands on GexSi1−x strained layers
JournalApplied Physics Letters
AuthorsHuang, C. J.Author
Li, D. Z.Author
Yu, Z.Author
Cheng, B. W.Author
Yu, J. Z.Author
Wang, Q. M.Author
Year2000 (July 17)Volume77
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.126986Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8528075Long-form Identifiermindat:1:5:8528075:9
GUID0
Full ReferenceHuang, C. J., Li, D. Z., Yu, Z., Cheng, B. W., Yu, J. Z., Wang, Q. M. (2000) Atomic-force-microscopy investigation of the formation and evolution of Ge islands on GexSi1−x strained layers. Applied Physics Letters, 77 (3). 391-393 doi:10.1063/1.126986
Plain TextHuang, C. J., Li, D. Z., Yu, Z., Cheng, B. W., Yu, J. Z., Wang, Q. M. (2000) Atomic-force-microscopy investigation of the formation and evolution of Ge islands on GexSi1−x strained layers. Applied Physics Letters, 77 (3). 391-393 doi:10.1063/1.126986
In(2000, July) Applied Physics Letters Vol. 77 (3) AIP Publishing

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Huang, C. J., Zuo, Y. H., Li, D. Z., Cheng, B. W., Luo, L. P., Yu, J. Z., Wang, Q. M. (2001) Shape evolution of Ge/Si(001) islands induced by strain-driven alloying. Applied Physics Letters, 78 (24). 3881-3883 doi:10.1063/1.1379361
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