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Gamiz, F., Jiménez-Molinos, F., Roldán, J. B., Cartujo-Cassinello, P. (2002) Coulomb scattering model for ultrathin silicon-on-insulator inversion layers. Applied Physics Letters, 80 (20). 3835-3837 doi:10.1063/1.1477623

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Reference TypeJournal (article/letter/editorial)
TitleCoulomb scattering model for ultrathin silicon-on-insulator inversion layers
JournalApplied Physics Letters
AuthorsGamiz, F.Author
Jiménez-Molinos, F.Author
Roldán, J. B.Author
Cartujo-Cassinello, P.Author
Year2002 (May 20)Volume80
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1477623Search in ResearchGate
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Mindat Ref. ID8532030Long-form Identifiermindat:1:5:8532030:3
GUID0
Full ReferenceGamiz, F., Jiménez-Molinos, F., Roldán, J. B., Cartujo-Cassinello, P. (2002) Coulomb scattering model for ultrathin silicon-on-insulator inversion layers. Applied Physics Letters, 80 (20). 3835-3837 doi:10.1063/1.1477623
Plain TextGamiz, F., Jiménez-Molinos, F., Roldán, J. B., Cartujo-Cassinello, P. (2002) Coulomb scattering model for ultrathin silicon-on-insulator inversion layers. Applied Physics Letters, 80 (20). 3835-3837 doi:10.1063/1.1477623
In(2002, May) Applied Physics Letters Vol. 80 (20) AIP Publishing

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Gámiz, F., Cartujo-Cassinello, P., Roldán, J. B., Jiménez-Molinos, F. (2002) Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates. Journal of Applied Physics, 92 (1). 288-295 doi:10.1063/1.1481962
Gámiz, F., Cartujo-Cassinello, P., Jiménez-Molinos, F., Carceller, J. E., Cartujo, P. (2003) Influence of image force and many-body correction on electron mobility in ultrathin double gate silicon on insulator inversion layers. Applied Physics Letters, 83 (15). 3120-3122 doi:10.1063/1.1619217
Gámiz, F., Roldán, J. B., Cartujo-Cassinello, P., López-Villanueva, J. A., Cartujo, P. (2001) Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers. Journal of Applied Physics, 89 (3). 1764pp. doi:10.1063/1.1331076
Gámiz, F., Roldán, J. B., López‐Villanueva, J. A., Cartujo, P. (1996) Coulomb scattering in strained‐silicon inversion layers on Si1−xGex substrates. Applied Physics Letters, 69 (6). 797-799 doi:10.1063/1.117895
Gámiz, F., Roldán, J. B., Cartujo-Cassinello, P., Carceller, J. E., López-Villanueva, J. A., Rodriguez, S. (1999) Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers. Journal of Applied Physics, 86 (11). 6269-6275 doi:10.1063/1.371684
Gámiz, F., Roldán, J. B., López-Villanueva, J. A., Cartujo-Cassinello, P., Carceller, J. E. (1999) Surface roughness at the Si–SiO2 interfaces in fully depleted silicon-on-insulator inversion layers. Journal of Applied Physics, 86 (12). 6854-6863 doi:10.1063/1.371763
Gámiz, F., Roldán, J. B., Godoy, A., Cartujo-Cassinello, P., Carceller, J. E. (2003) Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration. Journal of Applied Physics, 94 (9). 5732-5741 doi:10.1063/1.1615706
Gámiz, F., Roldán, J. B., López-Villanueva, J. A. (1998) Phonon-limited electron mobility in ultrathin silicon-on-insulator inversion layers. Journal of Applied Physics, 83 (9). 4802-4806 doi:10.1063/1.367273
Jiménez-Molinos, F., Gámiz, F., Palma, A., Cartujo, P., López-Villanueva, J. A. (2002) Direct and trap-assisted elastic tunneling through ultrathin gate oxides. Journal of Applied Physics, 91 (8). 5116-5124 doi:10.1063/1.1461062
Prunnila, M., Ahopelto, J., Gamiz, F. (2004) Electron mobility in ultrathin silicon-on-insulator layers at 4.2 K. Applied Physics Letters, 84 (13). 2298-2300 doi:10.1063/1.1687980
Gámiz, F., Roldán, J. B., Godoy, A. (2002) Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility. Applied Physics Letters, 80 (22). 4160-4162 doi:10.1063/1.1483907
 
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