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Meijer, E. J., Tanase, C., Blom, P. W. M., van Veenendaal, E., Huisman, B.-H., de Leeuw, D. M., Klapwijk, T. M. (2002) Switch-on voltage in disordered organic field-effect transistors. Applied Physics Letters, 80 (20). 3838-3840 doi:10.1063/1.1479210

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Reference TypeJournal (article/letter/editorial)
TitleSwitch-on voltage in disordered organic field-effect transistors
JournalApplied Physics Letters
AuthorsMeijer, E. J.Author
Tanase, C.Author
Blom, P. W. M.Author
van Veenendaal, E.Author
Huisman, B.-H.Author
de Leeuw, D. M.Author
Klapwijk, T. M.Author
Year2002 (May 20)Volume80
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1479210Search in ResearchGate
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Mindat Ref. ID8532040Long-form Identifiermindat:1:5:8532040:0
GUID0
Full ReferenceMeijer, E. J., Tanase, C., Blom, P. W. M., van Veenendaal, E., Huisman, B.-H., de Leeuw, D. M., Klapwijk, T. M. (2002) Switch-on voltage in disordered organic field-effect transistors. Applied Physics Letters, 80 (20). 3838-3840 doi:10.1063/1.1479210
Plain TextMeijer, E. J., Tanase, C., Blom, P. W. M., van Veenendaal, E., Huisman, B.-H., de Leeuw, D. M., Klapwijk, T. M. (2002) Switch-on voltage in disordered organic field-effect transistors. Applied Physics Letters, 80 (20). 3838-3840 doi:10.1063/1.1479210
In(2002, May) Applied Physics Letters Vol. 80 (20) AIP Publishing

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Meijer, E. J., Gelinck, G. H., van Veenendaal, E., Huisman, B.-H., de Leeuw, D. M., Klapwijk, T. M. (2003) Scaling behavior and parasitic series resistance in disordered organic field-effect transistors. Applied Physics Letters, 82 (25). 4576-4578 doi:10.1063/1.1581389
Meijer, E. J., de Leeuw, D. M., Setayesh, S., van Veenendaal, E., Huisman, B. -H., Blom, P. W. M., Hummelen, J. C., Scherf, U., Klapwijk, T. M. (2003) Solution-processed ambipolar organic field-effect transistors and inverters. Nature Materials, 2 (10). 678-682 doi:10.1038/nmat978
Meijer, E. J., de Leeuw, D. M., Setayesh, S., van Veenendaal, E., Huisman, B.-H., Blom, P. W. M., Hummelen, J. C., Scherf, U., Klapwijk, T. M. (2003) Erratum: Corrigendum: Solution-processed ambipolar organic field-effect transistors and inverters. Nature Materials, 2 (12). 834 doi:10.1038/nmat1023
Meijer, E. J., Detcheverry, C., Baesjou, P. J., van Veenendaal, E., de Leeuw, D. M., Klapwijk, T. M. (2003) Dopant density determination in disordered organic field-effect transistors. Journal of Applied Physics, 93 (8). 4831-4835 doi:10.1063/1.1559933
Anthopoulos, T. D., Tanase, C., Setayesh, S., Meijer, E. J., Hummelen, J. C., Blom, P. W. M., de Leeuw, D. M. (2004) Ambipolar Organic Field-Effect Transistors Based on a Solution-Processed Methanofullerene. Advanced Materials, 16. 2174-2179 doi:10.1002/adma.200400309
Maddalena, F., Meijer, E. J., Asadi, K., de Leeuw, D. M., Blom, P. W. M. (2010) Doping kinetics of organic semiconductors investigated by field-effect transistors. Applied Physics Letters, 97 (4). 43302pp. doi:10.1063/1.3466903
Tanase, C., Meijer, E. J., Blom, P. W. M., de Leeuw, D. M. (2003) Unification of the Hole Transport in Polymeric Field-Effect Transistors and Light-Emitting Diodes. Physical Review Letters, 91 (21). doi:10.1103/physrevlett.91.216601
Naber, R. C. G., de Boer, B., Blom, P. W. M., de Leeuw, D. M. (2005) Low-voltage polymer field-effect transistors for nonvolatile memories. Applied Physics Letters, 87 (20). 203509pp. doi:10.1063/1.2132062
Meijer, E. J., Matters, M., Herwig, P. T., de Leeuw, D. M., Klapwijk, T. M. (2000) The Meyer–Neldel rule in organic thin-film transistors. Applied Physics Letters, 76 (23). 3433-3435 doi:10.1063/1.126669
Anthopoulos, Thomas D., de Leeuw, Dago M., Cantatore, Eugenio, Setayesh, Sepas, Meijer, Eduard J., Tanase, Cristina, Hummelen, Jan C., Blom, Paul W. M. (2004) Organic complementary-like inverters employing methanofullerene-based ambipolar field-effect transistors. Applied Physics Letters, 85 (18). 4205-4207 doi:10.1063/1.1812577
Smits, Edsger C. P., Anthopoulos, Thomas D., Setayesh, Sepas, van Veenendaal, Erik, Coehoorn, Reinder, Blom, Paul W. M., de Boer, Bert, de Leeuw, Dago M. (2006) Ambipolar charge transport in organic field-effect transistors. Physical Review B, 73 (20) doi:10.1103/physrevb.73.205316
 
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