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Dadgar, A., Poschenrieder, M., Bläsing, J., Fehse, K., Diez, A., Krost, A. (2002) Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking. Applied Physics Letters, 80 (20). 3670-3672 doi:10.1063/1.1479455

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Reference TypeJournal (article/letter/editorial)
TitleThick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking
JournalApplied Physics Letters
AuthorsDadgar, A.Author
Poschenrieder, M.Author
Bläsing, J.Author
Fehse, K.Author
Diez, A.Author
Krost, A.Author
Year2002 (May 20)Volume80
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1479455Search in ResearchGate
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Mindat Ref. ID8532043Long-form Identifiermindat:1:5:8532043:7
GUID0
Full ReferenceDadgar, A., Poschenrieder, M., Bläsing, J., Fehse, K., Diez, A., Krost, A. (2002) Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking. Applied Physics Letters, 80 (20). 3670-3672 doi:10.1063/1.1479455
Plain TextDadgar, A., Poschenrieder, M., Bläsing, J., Fehse, K., Diez, A., Krost, A. (2002) Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking. Applied Physics Letters, 80 (20). 3670-3672 doi:10.1063/1.1479455
In(2002, May) Applied Physics Letters Vol. 80 (20) AIP Publishing

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Bläsing, J., Reiher, A., Dadgar, A., Diez, A., Krost, A. (2002) The origin of stress reduction by low-temperature AlN interlayers. Applied Physics Letters, 81 (15). 2722-2724 doi:10.1063/1.1512331
Poschenrieder, M., Schulze, F., Bläsing, J., Dadgar, A., Diez, A., Christen, J., Krost, A. (2002) Bright blue to orange photoluminescence emission from high-quality InGaN/GaN multiple-quantum-wells on Si(111) substrates. Applied Physics Letters, 81 (9). 1591-1593 doi:10.1063/1.1502909
Schulze, F., Dadgar, A., Bläsing, J., Diez, A., Krost, A. (2006) Metalorganic vapor phase epitaxy grown InGaN∕GaN light-emitting diodes on Si(001) substrate. Applied Physics Letters, 88 (12). 121114pp. doi:10.1063/1.2188383
Reiher, A., Bläsing, J., Dadgar, A., Diez, A., Krost, A. (2003) Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers. Journal of Crystal Growth, 248. 563-567 doi:10.1016/s0022-0248(02)01880-8
Dadgar, A., Poschenrieder, M., Contreras, O., Christen, J., Fehse, K., Bl�sing, J., Diez, A., Schulze, F., Riemann, T., Ponce, F.A., Krost, A. (2002) Bright, Crack-Free InGaN/GaN Light Emitters on Si(111). physica status solidi (a), 192 (2). 308-313 doi:10.1002/1521-396x(200208)192:2<308::aid-pssa308>3.0.co;2-m
Tripathy, S., Lin, V. K. X., Teo, S. L., Dadgar, A., Diez, A., Bläsing, J., Krost, A. (2007) InGaN∕GaN light emitting diodes on nanoscale silicon on insulator. Applied Physics Letters, 91 (23). 231109pp. doi:10.1063/1.2814062
Dadgar, A., Poschenrieder, M., Reiher, A., Bläsing, J., Christen, J., Krtschil, A., Finger, T., Hempel, T., Diez, A., Krost, A. (2003) Reduction of stress at the initial stages of GaN growth on Si(111). Applied Physics Letters, 82 (1). 28-30 doi:10.1063/1.1534940
Schulze, F., Dadgar, A., Bertram, F., Bläsing, J., Diez, A., Veit, P., Clos, R., Christen, J., Krost, A. (2007) Blue light emitting diodes on Si(001) grown by MOVPE. physica status solidi (c), 4 (1). 41-44 doi:10.1002/pssc.200673534
Schulze, F., Dadgar, A., Bertram, F., Bläsing, J., Diez, A., Veit, P., Clos, R., Christen, J., Krost, A. (2007) Blue light emitting diodes on Si(001) grown by MOVPE. physica status solidi (c), 4 (1). 1 doi:10.1002/pssc.200790000
Krost, A., Dadgar, A., Bläsing, J., Diez, A., Hempel, T., Petzold, S., Christen, J., Clos, R. (2004) Evolution of stress in GaN heteroepitaxy on AlN∕Si(111): From hydrostatic compressive to biaxial tensile. Applied Physics Letters, 85 (16). 3441-3443 doi:10.1063/1.1808237
Fritze, S., Drechsel, P., Stauss, P., Rode, P., Markurt, T., Schulz, T., Albrecht, M., Bläsing, J., Dadgar, A., Krost, A. (2012) Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy. Journal of Applied Physics, 111 (12). 124505pp. doi:10.1063/1.4729044
 
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