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Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki (2002) Common-emitter current–voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer. Applied Physics Letters, 80 (20). 3841-3843 doi:10.1063/1.1480102

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Reference TypeJournal (article/letter/editorial)
TitleCommon-emitter current–voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer
JournalApplied Physics Letters
AuthorsKumakura, KazuhideAuthor
Makimoto, ToshikiAuthor
Kobayashi, NaokiAuthor
Year2002 (May 20)Volume80
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1480102Search in ResearchGate
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Mindat Ref. ID8532048Long-form Identifiermindat:1:5:8532048:2
GUID0
Full ReferenceKumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki (2002) Common-emitter current–voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer. Applied Physics Letters, 80 (20). 3841-3843 doi:10.1063/1.1480102
Plain TextKumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki (2002) Common-emitter current–voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer. Applied Physics Letters, 80 (20). 3841-3843 doi:10.1063/1.1480102
In(2002, May) Applied Physics Letters Vol. 80 (20) AIP Publishing

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Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki (2002) Common-emitter current–voltage characteristics of a pnp GaN bipolar junction transistor. Applied Physics Letters, 80 (7). 1225-1227 doi:10.1063/1.1447593
Kumakura, Kazuhide, Makimoto, Toshiki (2007) Pnp AlGaN/InGaN/GaN Double Heterojunction Bipolar Transistors With Low-Base-Resistance (<100 Ω/square) Japanese Journal of Applied Physics, 46 (4) 2338-2340 doi:10.1143/jjap.46.2338
Kumakura, Kazuhide, Makimoto, Toshiki (2005) High-voltage operation with high current gain of pnp AlGaN∕GaN heterojunction bipolar transistors with thin n-type GaN base. Applied Physics Letters, 86 (2). 23506pp. doi:10.1063/1.1851608
Kumakura, Kazuhide, Makimoto, Toshiki (2009) High-temperature characteristics up to 590 °C of a pnp AlGaN/GaN heterojunction bipolar transistor. Applied Physics Letters, 94 (10). 103502pp. doi:10.1063/1.3001799
Kumakura, Kazuhide, Makimoto, Toshiki (2008) High performance pnp AlGaN∕GaN heterojunction bipolar transistors on GaN substrates. Applied Physics Letters, 92 (15). 153509pp. doi:10.1063/1.2912502
Kumakura, Kazuhide, Makimoto, Toshiki (2008) Carrier transport mechanisms of Pnp AlGaN∕GaN heterojunction bipolar transistors. Applied Physics Letters, 92 (9). 93504pp. doi:10.1063/1.2885070
Makimoto, Toshiki, Kumakura, Kazuhide, Kobayashi, Naoki (2001) High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base. Applied Physics Letters, 79 (3). 380-381 doi:10.1063/1.1387261
Makimoto, Toshiki, Kumakura, Kazuhide, Kobayashi, Naoki (2003) High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN. Applied Physics Letters, 83 (5). 1035-1037 doi:10.1063/1.1597989
Nishikawa, Atsushi, Kumakura, Kazuhide, Makimoto, Toshiki (2007) Temperature dependence of current-voltage characteristics of npn-type GaN∕InGaN double heterojunction bipolar transistors. Applied Physics Letters, 91 (13). 133514pp. doi:10.1063/1.2793819
Kumakura, Kazuhide, Makimoto, Toshiki, Kobayashi, Naoki (2001) Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer. Applied Physics Letters, 79 (16). 2588-2590 doi:10.1063/1.1410336
Makimoto, Toshiki, Kumakura, Kazuhide, Kobayashi, Naoki (2004) Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN/InGaN Heterojunction Bipolar Transistors. Japanese Journal of Applied Physics, 43 (4) 1922-1924 doi:10.1143/jjap.43.1922
 
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