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Tsai, Chiung-Chi, Chang, Chen-Shiung, Chen, Tsung-Yu (2002) Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films. Applied Physics Letters, 80 (20). 3718-3720 doi:10.1063/1.1480108

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Reference TypeJournal (article/letter/editorial)
TitleLow-etch-pit-density GaN substrates by regrowth on free-standing GaN films
JournalApplied Physics Letters
AuthorsTsai, Chiung-ChiAuthor
Chang, Chen-ShiungAuthor
Chen, Tsung-YuAuthor
Year2002 (May 20)Volume80
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1480108Search in ResearchGate
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Mindat Ref. ID8532052Long-form Identifiermindat:1:5:8532052:5
GUID0
Full ReferenceTsai, Chiung-Chi, Chang, Chen-Shiung, Chen, Tsung-Yu (2002) Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films. Applied Physics Letters, 80 (20). 3718-3720 doi:10.1063/1.1480108
Plain TextTsai, Chiung-Chi, Chang, Chen-Shiung, Chen, Tsung-Yu (2002) Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films. Applied Physics Letters, 80 (20). 3718-3720 doi:10.1063/1.1480108
In(2002, May) Applied Physics Letters Vol. 80 (20) AIP Publishing

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