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Kerdiles, S., Berthelot, A., Rizk, R., Pichon, L. (2002) Fabrication and properties of low-temperature (⩽600 °C) processed n-type nanocrystalline SiC/p-type crystalline Si heterojunction diodes. Applied Physics Letters, 80 (20). 3772-3774 doi:10.1063/1.1480474

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Reference TypeJournal (article/letter/editorial)
TitleFabrication and properties of low-temperature (⩽600 °C) processed n-type nanocrystalline SiC/p-type crystalline Si heterojunction diodes
JournalApplied Physics Letters
AuthorsKerdiles, S.Author
Berthelot, A.Author
Rizk, R.Author
Pichon, L.Author
Year2002 (May 20)Volume80
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1480474Search in ResearchGate
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Mindat Ref. ID8532062Long-form Identifiermindat:1:5:8532062:2
GUID0
Full ReferenceKerdiles, S., Berthelot, A., Rizk, R., Pichon, L. (2002) Fabrication and properties of low-temperature (⩽600 °C) processed n-type nanocrystalline SiC/p-type crystalline Si heterojunction diodes. Applied Physics Letters, 80 (20). 3772-3774 doi:10.1063/1.1480474
Plain TextKerdiles, S., Berthelot, A., Rizk, R., Pichon, L. (2002) Fabrication and properties of low-temperature (⩽600 °C) processed n-type nanocrystalline SiC/p-type crystalline Si heterojunction diodes. Applied Physics Letters, 80 (20). 3772-3774 doi:10.1063/1.1480474
In(2002, May) Applied Physics Letters Vol. 80 (20) AIP Publishing

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Kerdiles, S., Berthelot, A., Gourbilleau, F., Rizk, R. (2000) Low temperature deposition of nanocrystalline silicon carbide thin films. Applied Physics Letters, 76 (17). 2373-2375 doi:10.1063/1.126350
Ikeda, Tomohiro, Teii, Kungen (2009) Origin of reverse leakage current in n-type nanocrystalline diamond/p-type silicon heterojunction diodes. Applied Physics Letters, 94 (7). 72104pp. doi:10.1063/1.3082045
Chaudhry, M. I., Wright, R. L. (1991) Fabrication and properties of polycrystalline‐SiC/Si structures for Si heterojunction devices. Applied Physics Letters, 59 (1). 51-53 doi:10.1063/1.105519
Kerdiles, S., Madelon, R., Rizk, R. (2001) Spectroscopic ellipsometry analysis of nanocrystalline silicon carbide obtained at low temperature. Applied Surface Science, 184. 150-155 doi:10.1016/s0169-4332(01)00489-5
Veerasamy, V. S., Amaratunga, G. A. J., Park, J. S., Milne, W. I., MacKenzie, H. S., McKenzie, D. R. (1994) Photoresponse characteristics ofn‐type tetrahedral amorphous carbon/p‐type Si heterojunction diodes. Applied Physics Letters, 64 (17). 2297-2299 doi:10.1063/1.111649
Colder, H., Marie, P., Pichon, L., Rizk, R. (2004) Hydrogenated nanocrystalline silicon carbide: fabrication, properties and heterostructure device application. physica status solidi (c), 1 (2). 269-273 doi:10.1002/pssc.200303922
Liao, M. H., Kuo, P.-S., Jan, S.-R., Chang, S. T., Liu, C. W. (2006) Strained Pt Schottky diodes on n-type Si and Ge. Applied Physics Letters, 88 (14). 143509pp. doi:10.1063/1.2191831
Saks, N. S., Ryu, S.-H., Suvorov, A. V. (2002) Low-dose n-type nitrogen implants in 4H-SiC. Applied Physics Letters, 81 (26). 4958-4960 doi:10.1063/1.1531838
(2013) Fabrication and characterization of n-type aluminum-boron co-doped ZnO on p-type silicon (n-AZB/p-Si) heterojunction diodes. Materials Research Bulletin, 48 (11) 4596-4600 doi:10.1016/j.materresbull.2013.07.061
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Kerdiles, S., Rizk, R. (2002) Low temperature nanocrystallízation of silicon carbide by hydrogen reactive magnetron sputtering. Philosophical Magazine A, 82 (3). 601-614 doi:10.1080/01418610208239620
 
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