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van ’t Erve, O. M. J., Vlutters, R., Kumar, P. S. Anil, Kim, S. D., Postma, F. M., Jansen, R., Lodder, J. C. (2002) Transfer ratio of the spin-valve transistor. Applied Physics Letters, 80 (20). 3787-3789 doi:10.1063/1.1480889

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Reference TypeJournal (article/letter/editorial)
TitleTransfer ratio of the spin-valve transistor
JournalApplied Physics Letters
Authorsvan ’t Erve, O. M. J.Author
Vlutters, R.Author
Kumar, P. S. AnilAuthor
Kim, S. D.Author
Postma, F. M.Author
Jansen, R.Author
Lodder, J. C.Author
Year2002 (May 20)Volume80
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1480889Search in ResearchGate
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Mindat Ref. ID8532078Long-form Identifiermindat:1:5:8532078:3
GUID0
Full Referencevan ’t Erve, O. M. J., Vlutters, R., Kumar, P. S. Anil, Kim, S. D., Postma, F. M., Jansen, R., Lodder, J. C. (2002) Transfer ratio of the spin-valve transistor. Applied Physics Letters, 80 (20). 3787-3789 doi:10.1063/1.1480889
Plain Textvan ’t Erve, O. M. J., Vlutters, R., Kumar, P. S. Anil, Kim, S. D., Postma, F. M., Jansen, R., Lodder, J. C. (2002) Transfer ratio of the spin-valve transistor. Applied Physics Letters, 80 (20). 3787-3789 doi:10.1063/1.1480889
In(2002, May) Applied Physics Letters Vol. 80 (20) AIP Publishing

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Jansen, R., van ’t Erve, O. M. J., Kim, S. D., Vlutters, R., Anil Kumar, P. S., Lodder, J. C. (2001) The spin-valve transistor: Fabrication, characterization, and physics (invited). Journal of Applied Physics, 89 (11). 7431-7436 doi:10.1063/1.1357857
Vlutters, R., Jansen, R., van ’t Erve, O. M. J., Kim, S. D., Lodder, J. C. (2001) Hot-electron transport through Ni80Fe20 in a spin-valve transistor. Journal of Applied Physics, 89 (11). 7305-7307 doi:10.1063/1.1357853
Vlutters, R., van ’t Erve, O. M. J., Jansen, R., Kim, S. D., Lodder, J. C., Vedyayev, A., Dieny, B. (2001) Modeling of spin-dependent hot-electron transport in the spin-valve transistor. Physical Review B, 65 (2) doi:10.1103/physrevb.65.024416
Jansen, R., Anil Kumar, P. S., van't Erve, O. M. J., Vlutters, R., de Haan, P., Lodder, J. C. (2000) Thermal Spin-Wave Scattering in Hot-Electron Magnetotransport Across a Spin Valve. Physical Review Letters, 85 (15). 3277-3280 doi:10.1103/physrevlett.85.3277
Jansen, R., Gokcan, H., van ’t Erve, O. M. J., Postma, F. M., Lodder, J. C. (2004) Spin-valve transistors with high magnetocurrent and 40 μA output current. Journal of Applied Physics, 95 (11). 6927-6929 doi:10.1063/1.1687258
Vlutters, R., van 't Erve, O. M. J., Kim, S. D., Jansen, R., Lodder, J. C. (2001) Interface, Volume, and Thermal Attenuation of Hot-Electron Spins inNi80Fe20and Co. Physical Review Letters, 88 (2). doi:10.1103/physrevlett.88.027202
Jansen, R, Vlutters, R, Anil Kumar, P.S, van 't Erve, O.M.J, Kim, S.D, Lodder, J.C (2001) Temperature dependence of magnetocurrent of hot electrons in a spin-valve transistor. Journal of Magnetism and Magnetic Materials, 226. 658-660 doi:10.1016/s0304-8853(00)00772-1
Jansen, R., Kim, S. D., Vlutters, R., van't Erve, O. M. J., Lodder, J. C. (2001) Anisotropic Spin-Orbit Scattering of Hot-Electron Spins Injected into Ferromagnetic Thin-Films. Physical Review Letters, 87 (16). doi:10.1103/physrevlett.87.166601
Anil Kumar, P.S, Jansen, R, van ‘t Erve, O.M.J, Vlutters, R, de Haan, P, Lodder, J.C (2000) Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature. Journal of Magnetism and Magnetic Materials, 214. 1-6 doi:10.1016/s0304-8853(00)00052-4
Jansen, R., van’t Erve, O. M. J., Postma, F. M., Lodder, J. C. (2004) Comment on “Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers” [Appl. Phys. Lett. 83, 951 (2003)]. Applied Physics Letters, 84 (21). 4337-4338 doi:10.1063/1.1739521
Kumar, P S Anil, Lodder, J C (2000) The spin-valve transistor1. Journal of Physics D: Applied Physics, 33. 2911-2920 doi:10.1088/0022-3727/33/22/307
 
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