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Morales-Paliza, M. A., Haglund, R. F., Feldman, L. C. (2002) Mechanisms of oxygen incorporation in indium–tin–oxide films deposited by laser ablation at room temperature. Applied Physics Letters, 80 (20). 3757-3759 doi:10.1063/1.1481243

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Reference TypeJournal (article/letter/editorial)
TitleMechanisms of oxygen incorporation in indium–tin–oxide films deposited by laser ablation at room temperature
JournalApplied Physics Letters
AuthorsMorales-Paliza, M. A.Author
Haglund, R. F.Author
Feldman, L. C.Author
Year2002 (May 20)Volume80
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1481243Search in ResearchGate
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Mindat Ref. ID8532085Long-form Identifiermindat:1:5:8532085:3
GUID0
Full ReferenceMorales-Paliza, M. A., Haglund, R. F., Feldman, L. C. (2002) Mechanisms of oxygen incorporation in indium–tin–oxide films deposited by laser ablation at room temperature. Applied Physics Letters, 80 (20). 3757-3759 doi:10.1063/1.1481243
Plain TextMorales-Paliza, M. A., Haglund, R. F., Feldman, L. C. (2002) Mechanisms of oxygen incorporation in indium–tin–oxide films deposited by laser ablation at room temperature. Applied Physics Letters, 80 (20). 3757-3759 doi:10.1063/1.1481243
In(2002, May) Applied Physics Letters Vol. 80 (20) AIP Publishing

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Wu, Y., Marée, C. H. M., Haglund, R. F., Hamilton, J. D., Morales Paliza, M. A., Huang, M. B., Feldman, L. C., Weller, R. A. (1999) Resistivity and oxygen content of indium tin oxide films deposited at room temperature by pulsed-laser ablation. Journal of Applied Physics, 86 (2). 991-994 doi:10.1063/1.370864
Liu, C, Matsutani, T, Yamamoto, N, Kiuchi, M (2002) High-quality indium tin oxide films prepared at room temperature by oxygen ion beam assisted deposition. Europhysics Letters (EPL), 59. 606-611 doi:10.1209/epl/i2002-00147-6
Satoh, Toshikazu, Fujikawa, Hisayoshi, Taga, Yasunori (2005) Influence of indium tin oxide electrodes deposited at room temperature on the properties of organic light-emitting devices. Applied Physics Letters, 87 (14). 143503pp. doi:10.1063/1.2077835
Martino, M, Luches, A, Fernández, M, Anobile, P, Petruzzelli, V (2001) Characterization of thin indium tin oxide films deposited by pulsed XeCl laser ablation. Journal of Physics D: Applied Physics, 34. 2606-2609 doi:10.1088/0022-3727/34/17/306
Ren, X.T., Huang, M.B., Amadon, S., Lanford, W.A., Morales Paliza, M.A., Feldman, L.C. (2001) Ion beam measurements of Sn/In ratios in indium tin oxide films prepared by pulsed-laser deposition. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 174 (1). 187-193 doi:10.1016/s0168-583x(00)00437-7
Ghandhi, S. K., Siviy, R., Borrego, J. M. (1979) The growth of tin oxide films at room temperature. Applied Physics Letters, 34 (12). 833-835 doi:10.1063/1.90683
Guillén, C., Herrero, J. (2007) Structure, optical, and electrical properties of indium tin oxide thin films prepared by sputtering at room temperature and annealed in air or nitrogen. Journal of Applied Physics, 101 (7). 73514pp. doi:10.1063/1.2715539
Song, Pung Keun, Shigesato, Yuzo, Kamei, Masayuki, Yasui, Itaru (1999) Electrical and Structural Properties of Tin-Doped Indium Oxide Films Deposited by DC Sputtering at Room Temperature. Japanese Journal of Applied Physics, 38. 2921-2927 doi:10.1143/jjap.38.2921
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Lacroix, B., Santos, A. J., Hurand, S., Corvisier, A., Paumier, F., Girardeau, T., Maudet, F., Dupeyrat, C., García, R., Morales, F. M. (2019) Nanostructure and Physical Properties Control of Indium Tin Oxide Films Prepared at Room Temperature through Ion Beam Sputtering Deposition at Oblique Angles. The Journal of Physical Chemistry C, 123 (22). 14036-14046 doi:10.1021/acs.jpcc.9b02885
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