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Ryu, Mee-Yi, Chen, C. Q., Kuokstis, E., Yang, J. W., Simin, G., Khan, M. Asif (2002) Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials. Applied Physics Letters, 80 (20). 3730-3732 doi:10.1063/1.1481766

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Reference TypeJournal (article/letter/editorial)
TitleLuminescence mechanisms in quaternary AlxInyGa1−x−yN materials
JournalApplied Physics Letters
AuthorsRyu, Mee-YiAuthor
Chen, C. Q.Author
Kuokstis, E.Author
Yang, J. W.Author
Simin, G.Author
Khan, M. AsifAuthor
Year2002 (May 20)Volume80
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1481766Search in ResearchGate
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Mindat Ref. ID8532088Long-form Identifiermindat:1:5:8532088:0
GUID0
Full ReferenceRyu, Mee-Yi, Chen, C. Q., Kuokstis, E., Yang, J. W., Simin, G., Khan, M. Asif (2002) Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials. Applied Physics Letters, 80 (20). 3730-3732 doi:10.1063/1.1481766
Plain TextRyu, Mee-Yi, Chen, C. Q., Kuokstis, E., Yang, J. W., Simin, G., Khan, M. Asif (2002) Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials. Applied Physics Letters, 80 (20). 3730-3732 doi:10.1063/1.1481766
In(2002, May) Applied Physics Letters Vol. 80 (20) AIP Publishing

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Ryu, Mee-Yi, Chen, C. Q., Kuokstis, E., Yang, J. W., Simin, G., Khan, M. Asif, Sim, G. G., Yu, P. W. (2002) Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells. Applied Physics Letters, 80 (21). 3943-3945 doi:10.1063/1.1482415
Ryu, Mee-Yi, Song, J. H., Chen, C. Q., Khan, M. Asif (2007) Optical Investigation of Quaternary AlxInyGa1-x-yN Epilayers Grown by Using Pulsed Metalorganic Chemical Vapor Deposition. Journal of the Korean Physical Society, 50 (1). 59-63 doi:10.3938/jkps.50.59
Kuokstis, E., Yang, J. W., Simin, G., Khan, M. Asif, Gaska, R., Shur, M. S. (2002) Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells. Applied Physics Letters, 80 (6). 977-979 doi:10.1063/1.1433164
Kuokstis, E., Zhang, J., Ryu, M.-Y., Yang, J. W., Simin, G., Khan, M. Asif, Gaska, R., Shur, M. S. (2001) Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells. Applied Physics Letters, 79 (26). 4375-4377 doi:10.1063/1.1429753
Kuokstis, E., Zhang, J., Fareed, Q., Yang, J. W., Simin, G., Khan, M. Asif, Gaska, R., Shur, M., Rojo, C., Schowalter, L. (2002) Near-band-edge photoluminescence of wurtzite-type AlN. Applied Physics Letters, 81 (15). 2755-2757 doi:10.1063/1.1510586
Chen, Changqing, Yang, Jinwei, Ryu, Mee-Yi, Zhang, Jianping, Kuokstis, Edmundas, Simin, Grigory, Khan, M. Asif (2002) Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AlInGaN Layers and Multiple Quantum Wells for Ultraviolet Light Emission. Japanese Journal of Applied Physics, 41. 1924-1928 doi:10.1143/jjap.41.1924
Kuokstis, E., Chen, C. Q., Gaevski, M. E., Sun, W. H., Yang, J. W., Simin, G., Asif Khan, M., Maruska, H. P., Hill, D. W., Chou, M. C., Gallagher, J. J., Chai, B. (2002) Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells. Applied Physics Letters, 81 (22). 4130-4132 doi:10.1063/1.1524298
Zhang, J., Kuokstis, E., Fareed, Q., Wang, H., Yang, J., Simin, G., Khan, M. Asif, Gaska, R., Shur, M. (2001) Pulsed atomic layer epitaxy of quaternary AlInGaN layers. Applied Physics Letters, 79 (7). 925-927 doi:10.1063/1.1392301
Kuokstis, E., Zhang, J., Fareed, Q., Yang, J. W., Simin, G., Khan, M. Asif, Gaska, R., Shur, M., Rojo, J. C., Schowalter, L. J. (2003) Erratum: “Near-band-edge photoluminescence of wurtzite-type AlN” [Appl. Phys. Lett. 81, 2755 (2002)]. Applied Physics Letters, 82 (9). 1488 doi:10.1063/1.1555280
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Chen, C. Q., Gaevski, M. E., Sun, W. H., Kuokstis, E., Zhang, J. P., Fareed, R. S. Q., Wang, H. M., Yang, J. W., Simin, G., Khan, M. A., Maruska, Herbert-Paul, Hill, David W., Chou, Mitch M. C., Chai, Bruce (2002) GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates. Applied Physics Letters, 81 (17). 3194-3196 doi:10.1063/1.1516230
 
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