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Sugiyama, Tomohiko, Tai, Tomoyoshi, Sugino, Takashi (2002) Effect of annealing on dielectric constant of boron carbon nitride films synthesized by plasma-assisted chemical vapor deposition. Applied Physics Letters, 80 (22). 4214-4216 doi:10.1063/1.1482788

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Reference TypeJournal (article/letter/editorial)
TitleEffect of annealing on dielectric constant of boron carbon nitride films synthesized by plasma-assisted chemical vapor deposition
JournalApplied Physics Letters
AuthorsSugiyama, TomohikoAuthor
Tai, TomoyoshiAuthor
Sugino, TakashiAuthor
Year2002 (June 3)Volume80
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.1482788Search in ResearchGate
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Mindat Ref. ID8532172Long-form Identifiermindat:1:5:8532172:8
GUID0
Full ReferenceSugiyama, Tomohiko, Tai, Tomoyoshi, Sugino, Takashi (2002) Effect of annealing on dielectric constant of boron carbon nitride films synthesized by plasma-assisted chemical vapor deposition. Applied Physics Letters, 80 (22). 4214-4216 doi:10.1063/1.1482788
Plain TextSugiyama, Tomohiko, Tai, Tomoyoshi, Sugino, Takashi (2002) Effect of annealing on dielectric constant of boron carbon nitride films synthesized by plasma-assisted chemical vapor deposition. Applied Physics Letters, 80 (22). 4214-4216 doi:10.1063/1.1482788
In(2002, June) Applied Physics Letters Vol. 80 (22) AIP Publishing

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Sugino, Takashi, Etou, Yoshihiro, Tai, Tomoyoshi, Mori, Hirotaro (2002) Dielectric constant of boron carbon nitride films synthesized by plasma-assisted chemical-vapor deposition. Applied Physics Letters, 80 (4). 649-651 doi:10.1063/1.1436522
Sugino, Takashi, Tai, Tomoyoshi (2000) Dielectric Constant of Boron Nitride Films Synthesized by Plasma-Assisted Chemical Vapor Deposition. Japanese Journal of Applied Physics, 39. doi:10.1143/jjap.39.l1101
Zhang, Zhengjun, Kimura, Chiharu, Sugino, Takashi (2005) Wavelength-dependent effect of ultraviolet irradiation on dielectric constant of boron carbon nitride films. Journal of Applied Physics, 98 (3). 36105pp. doi:10.1063/1.1999023
Sugino, Takashi, Tanioka, Kazuhiko, Kawasaki, Seiji, Shirafuji, Junji (1997) Characterization and Field Emission of Sulfur-Doped Boron Nitride Synthesized by Plasma-Assisted Chemical Vapor Deposition. Japanese Journal of Applied Physics, 36. doi:10.1143/jjap.36.l463
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Sugino, Takashi, Tagawa, Shigeru (1999) Effect of oxygen plasma treatment on field emission characteristics of boron–nitride films. Applied Physics Letters, 74 (6). 889-891 doi:10.1063/1.123400
Endo, Kazuhiko, Tatsumi, Toru, Matsubara, Yoshihisa (1997) Deposition of silicon dioxide films on amorphous carbon films by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics. Applied Physics Letters, 70 (9). 1078-1079 doi:10.1063/1.118490
AndĂșjar, J. L., Bertran, E., Maniette, Y. (1996) Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma‐assisted chemical vapor deposition. Journal of Applied Physics, 80 (11). 6553-6555 doi:10.1063/1.363677
Takahashi, Kazuo, Mitamura, Takashi, Ono, Kouichi, Setsuhara, Yuichi, Itoh, Atsushi, Tachibana, Kunihide (2003) Characterization of porosity and dielectric constant of fluorocarbon porous films synthesized by using plasma-enhanced chemical vapor deposition and solvent process. Applied Physics Letters, 82 (15). 2476-2478 doi:10.1063/1.1567050
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