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Murata, Takeshi, Nakazawa, Hideki, Tsukidate, Yoshikazu, Suemitsu, Maki (2002) Erratum: “Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth” [Appl. Phys. Lett. 79, 746 (2001)]. Applied Physics Letters, 81 (1). 184 doi:10.1063/1.1490405

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Reference TypeJournal (article/letter/editorial)
TitleErratum: “Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth” [Appl. Phys. Lett. 79, 746 (2001)]
JournalApplied Physics Letters
AuthorsMurata, TakeshiAuthor
Nakazawa, HidekiAuthor
Tsukidate, YoshikazuAuthor
Suemitsu, MakiAuthor
Year2002 (July)Volume81
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1490405Search in ResearchGate
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Mindat Ref. ID8532877Long-form Identifiermindat:1:5:8532877:6
GUID0
Full ReferenceMurata, Takeshi, Nakazawa, Hideki, Tsukidate, Yoshikazu, Suemitsu, Maki (2002) Erratum: “Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth” [Appl. Phys. Lett. 79, 746 (2001)]. Applied Physics Letters, 81 (1). 184 doi:10.1063/1.1490405
Plain TextMurata, Takeshi, Nakazawa, Hideki, Tsukidate, Yoshikazu, Suemitsu, Maki (2002) Erratum: “Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth” [Appl. Phys. Lett. 79, 746 (2001)]. Applied Physics Letters, 81 (1). 184 doi:10.1063/1.1490405
In(2002, July) Applied Physics Letters Vol. 81 (1) AIP Publishing

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Murata, Takeshi, Nakazawa, Hideki, Tsukidate, Yoshikazu, Suemitsu, Maki (2001) Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy:In situobservations and detailed modeling of the growth. Applied Physics Letters, 79 (6). 746-748 doi:10.1063/1.1389768
Nakazawa, Hideki, Suemitsu, Maki, Miyamoto, Nobuo (1997) Effects of Adsorption Kinetics on the Low-Temperature Growth-Rate Activation Energy in Si Gas-Source Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 36. doi:10.1143/jjap.36.l703
Suemitsu, Maki, Nakazawa, Hideki, Morita, Tomoyuki, Miyamoto, Nobuo (1997) Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 36. doi:10.1143/jjap.36.l625
Tsukidate, Y, Suemitsu, M (2001) Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy. Applied Surface Science, 175. 43-48 doi:10.1016/s0169-4332(01)00054-x
Nakazawa, Hideki, Suemitsu, Maki (2001) Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C–SiC/Si(100) heteroepitaxy. Applied Physics Letters, 79 (6). 755-757 doi:10.1063/1.1390476
Li, Wei, Pessa, Markus, Ahlgren, Tommy, Dekker, James (2001) Erratum: “Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy” [Appl. Phys. Lett. 79, 1094 (2001)]. Applied Physics Letters, 79 (17). 2850 doi:10.1063/1.1413737
Suemitsu, Maki, Hirose, Fumihiko, Takakuwa, Yuji, Miyamoto, Nobuo (1990) Growth kinetics in silane gas-source molecular beam epitaxy. Journal of Crystal Growth, 105 (1). 203-208 doi:10.1016/0022-0248(90)90362-o
Hozhabri, N., Lee, S.‐H., Alavi, K. (1995) Erratum: ‘‘Infrared measurements in annealed molecular beam epitaxy GaAs grown at low temperature’’ [Appl. Phys. Lett. 66, 2546 (1995)]. Applied Physics Letters, 67 (7). 1036 doi:10.1063/1.115561
Suemitsu, Maki, Hirose, Fumihiko, Miyamoto, Nobuo (1991) Si and Ge gas-source molecular beam epitaxy (GSMBE). Journal of Crystal Growth, 107 (1). 1015-1020 doi:10.1016/0022-0248(91)90595-v
Kim, H., Glass, G., Soares, J. A. N. T., Foo, Y. L., Desjardins, P., Greene, J. E. (2001) Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation. Applied Physics Letters, 79 (20). 3263-3265 doi:10.1063/1.1415420
Roche, Stephan, Triozon, François, Rubio, Angel (2002) Erratum: “Backscattering in carbon nanotubes: Role of quantum interference effects” [Appl. Phys. Lett. 79, 3690 (2001)]. Applied Physics Letters, 80 (6). 1104 doi:10.1063/1.1446202
 
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