| Reference Type | Journal (article/letter/editorial) |
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| Title | ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy |
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| Journal | Applied Physics Letters |
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| Authors | Chan, Y. F. | Author |
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| Duan, X. F. | Author |
| Chan, S. K. | Author |
| Sou, I. K. | Author |
| Zhang, X. X. | Author |
| Wang, N. | Author |
| Year | 2003 (September 29) | Volume | 83 |
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| Issue | 13 |
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| Publisher | AIP Publishing |
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| DOI | doi:10.1063/1.1615293Search in ResearchGate |
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| Generate Citation Formats |
| Mindat Ref. ID | 8536432 | Long-form Identifier | mindat:1:5:8536432:5 |
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|
| GUID | 0 |
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| Full Reference | Chan, Y. F., Duan, X. F., Chan, S. K., Sou, I. K., Zhang, X. X., Wang, N. (2003) ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy. Applied Physics Letters, 83 (13). 2665-2667 doi:10.1063/1.1615293 |
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| Plain Text | Chan, Y. F., Duan, X. F., Chan, S. K., Sou, I. K., Zhang, X. X., Wang, N. (2003) ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy. Applied Physics Letters, 83 (13). 2665-2667 doi:10.1063/1.1615293 |
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| In | (2003, September) Applied Physics Letters Vol. 83 (13) AIP Publishing |
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