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Sheng, S. R., Rowell, N. L., McAlister, S. P. (2003) Strong near-infrared photoluminescence and absorption from Si/Si1−xGex type-II multiple quantum wells on bulk crystal SiGe substrates. Applied Physics Letters, 83 (14). 2790-2792 doi:10.1063/1.1615310

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Reference TypeJournal (article/letter/editorial)
TitleStrong near-infrared photoluminescence and absorption from Si/Si1−xGex type-II multiple quantum wells on bulk crystal SiGe substrates
JournalApplied Physics Letters
AuthorsSheng, S. R.Author
Rowell, N. L.Author
McAlister, S. P.Author
Year2003 (October 6)Volume83
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.1615310Search in ResearchGate
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Mindat Ref. ID8536466Long-form Identifiermindat:1:5:8536466:2
GUID0
Full ReferenceSheng, S. R., Rowell, N. L., McAlister, S. P. (2003) Strong near-infrared photoluminescence and absorption from Si/Si1−xGex type-II multiple quantum wells on bulk crystal SiGe substrates. Applied Physics Letters, 83 (14). 2790-2792 doi:10.1063/1.1615310
Plain TextSheng, S. R., Rowell, N. L., McAlister, S. P. (2003) Strong near-infrared photoluminescence and absorption from Si/Si1−xGex type-II multiple quantum wells on bulk crystal SiGe substrates. Applied Physics Letters, 83 (14). 2790-2792 doi:10.1063/1.1615310
In(2003, October) Applied Physics Letters Vol. 83 (14) AIP Publishing

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Sheng, S. R., Rowell, N. L., McAlister, S. P. (2003) Photoluminescence in tensile-strained Si type-II quantum wells on bulk single-crystal SiGe substrates. Applied Physics Letters, 83 (5). 857-859 doi:10.1063/1.1597413
Karunasiri, R. P. G., Park, J. S., Mii, Y. J., Wang, K. L. (1990) Intersubband absorption in Si1−xGex/Si multiple quantum wells. Applied Physics Letters, 57 (24). 2585-2587 doi:10.1063/1.103823
Karunasiri, R. P. G., Park, J. S., Wang, K. L. (1991) Si1−xGex/Si multiple quantum well infrared detector. Applied Physics Letters, 59 (20). 2588-2590 doi:10.1063/1.105911
Park, J. S., Karunasiri, R. P. G., Wang, K. L. (1992) Normal incidence infrared detector usingp‐type SiGe/Si multiple quantum wells. Applied Physics Letters, 60 (1). 103-105 doi:10.1063/1.107361
Sheng, S.R., Dion, M., McAlister, S.P., Rowell, N.L. (2003) Growth and characterization of Si/SiGe strained-layer superlattices on bulk single-crystal SiGe and Si substrates. Journal of Crystal Growth, 253 (1). 77-84 doi:10.1016/s0022-0248(03)01018-2
Kishimoto, Y., Shiraki, Y., Fukatsu, S. (1997) Photoluminescence study of Si1−xGex/Si surface quantum wells. Applied Physics Letters, 70 (21). 2837-2839 doi:10.1063/1.119019
Karunasiri, R. P. G., Park, J. S., Wang, K. L. (1992) Normal incidence infrared detector using intervalence‐subband transitions in Si1−xGex/Si quantum wells. Applied Physics Letters, 61 (20). 2434-2436 doi:10.1063/1.108188
Kawaguchi, K., Shiraki, Y., Usami, N., Zhang, J., Woods, N. J., Breton, G., Parry, G. (2001) Fabrication of strain-balanced Si/Si1−xGex multiple quantum wells on Si1−yGey virtual substrates and their optical properties. Applied Physics Letters, 79 (3). 344-346 doi:10.1063/1.1387263
Xiao, X., Liu, C. W., Sturm, J. C., Lenchyshyn, L. C., Thewalt, M. L. W. (1992) Photoluminescence from electron‐hole plasmas confined in Si/Si1−xGex/Si quantum wells. Applied Physics Letters, 60 (14). 1720-1722 doi:10.1063/1.107196
Rowell, N. L., Noël, J.-P., Houghton, D. C. (1991) Infrared emission from strained-Si1−xGex quantum wells. Canadian Journal of Physics, 69. 474-478 doi:10.1139/p91-078
Miyazaki, T., Fukatsu, S. (1999) Diminished photoluminescence polarization due to exciton ionization in strained Si1−xGex/Si(001) quantum wells. Applied Physics Letters, 75 (25). 3962-3964 doi:10.1063/1.125507
 
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