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Stoffel, M., Denker, U., Kar, G. S., Sigg, H., Schmidt, O. G. (2003) Extended wavelength region of self-assembled Ge/Si(001) islands capped with Si at different temperatures. Applied Physics Letters, 83 (14). 2910-2912 doi:10.1063/1.1615832

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Reference TypeJournal (article/letter/editorial)
TitleExtended wavelength region of self-assembled Ge/Si(001) islands capped with Si at different temperatures
JournalApplied Physics Letters
AuthorsStoffel, M.Author
Denker, U.Author
Kar, G. S.Author
Sigg, H.Author
Schmidt, O. G.Author
Year2003 (October 6)Volume83
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.1615832Search in ResearchGate
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Mindat Ref. ID8536480Long-form Identifiermindat:1:5:8536480:2
GUID0
Full ReferenceStoffel, M., Denker, U., Kar, G. S., Sigg, H., Schmidt, O. G. (2003) Extended wavelength region of self-assembled Ge/Si(001) islands capped with Si at different temperatures. Applied Physics Letters, 83 (14). 2910-2912 doi:10.1063/1.1615832
Plain TextStoffel, M., Denker, U., Kar, G. S., Sigg, H., Schmidt, O. G. (2003) Extended wavelength region of self-assembled Ge/Si(001) islands capped with Si at different temperatures. Applied Physics Letters, 83 (14). 2910-2912 doi:10.1063/1.1615832
In(2003, October) Applied Physics Letters Vol. 83 (14) AIP Publishing

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Denker, U., Stoffel, M., Schmidt, O. G. (2003) Quantitative evaluation of stress-field attenuation in stacks of self-assembled Ge islands. Applied Physics Letters, 83 (7). 1432-1434 doi:10.1063/1.1601677
Stoffel, M., Denker, U., Schmidt, O. G. (2003) Electroluminescence of self-assembled Ge hut clusters. Applied Physics Letters, 82 (19). 3236-3238 doi:10.1063/1.1572479
Denker, U., Stoffel, M., Schmidt, O. G., Sigg, H. (2003) Ge hut cluster luminescence below bulk Ge band gap. Applied Physics Letters, 82 (3). 454-456 doi:10.1063/1.1537437
Schmidt, O. G., Denker, U., Christiansen, S., Ernst, F. (2002) Composition of self-assembled Ge/Si islands in single and multiple layers. Applied Physics Letters, 81 (14). 2614-2616 doi:10.1063/1.1507612
Schmidt, O. G., Jin-Phillipp, N. Y., Lange, C., Denker, U., Eberl, K., Schreiner, R., Gräbeldinger, H., Schweizer, H. (2000) Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface. Applied Physics Letters, 77 (25). 4139-4141 doi:10.1063/1.1326842
Denker, U., Stoffel, M., Schmidt, O. G. (2003) Probing the Lateral Composition Profile of Self-Assembled Islands. Physical Review Letters, 90 (19). doi:10.1103/physrevlett.90.196102
Schmidt, O. G., Denker, U., Eberl, K., Kienzle, O., Ernst, F., Haug, R. J. (2000) Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands. Applied Physics Letters, 77 (26). 4341-4343 doi:10.1063/1.1332817
Kar, G. S., Kiravittaya, S., Denker, U., Nguyen, B.-Y., Schmidt, O. G. (2006) Strain distribution in a transistor using self-assembled SiGe islands in source and drain regions. Applied Physics Letters, 88 (25). 253108pp. doi:10.1063/1.2214150
Malachias, A., Schülli, T. U., Medeiros-Ribeiro, G., Cançado, L. G., Stoffel, M., Schmidt, O. G., Metzger, T. H., Magalhães-Paniago, R. (2005) X-ray study of atomic ordering in self-assembled Ge islands grown on Si(001) Physical Review B, 72 (16) doi:10.1103/physrevb.72.165315
Denker, Ulrich, Schmidt, Oliver G., Jin-Philipp, Neng-Yun, Eberl, Karl (2001) Trench formation around and between self-assembled Ge islands on Si. Applied Physics Letters, 78 (23). 3723-3725 doi:10.1063/1.1378049
Rastelli, A., Stoffel, M., Denker, U., Merdzhanova, T., Schmidt, O. G. (2006) Strained SiGe islands on Si(001): Evolution, motion, dissolution, and plastic relaxation. physica status solidi (a), 203 (14). 3506-3511 doi:10.1002/pssa.200622414
 
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