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Krishna, S., Raghavan, S., von Winckel, G., Stintz, A., Ariyawansa, G., Matsik, S. G., Perera, A. G. U. (2003) Three-color (λp1∼3.8 μm, λp2∼8.5 μm, and λp3∼23.2 μm) InAs/InGaAs quantum-dots-in-a-well detector. Applied Physics Letters, 83 (14). 2745-2747 doi:10.1063/1.1615838

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Reference TypeJournal (article/letter/editorial)
TitleThree-color (λp1∼3.8 μm, λp2∼8.5 μm, and λp3∼23.2 μm) InAs/InGaAs quantum-dots-in-a-well detector
JournalApplied Physics Letters
AuthorsKrishna, S.Author
Raghavan, S.Author
von Winckel, G.Author
Stintz, A.Author
Ariyawansa, G.Author
Matsik, S. G.Author
Perera, A. G. U.Author
Year2003 (October 6)Volume83
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.1615838Search in ResearchGate
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Mindat Ref. ID8536486Long-form Identifiermindat:1:5:8536486:6
GUID0
Full ReferenceKrishna, S., Raghavan, S., von Winckel, G., Stintz, A., Ariyawansa, G., Matsik, S. G., Perera, A. G. U. (2003) Three-color (λp1∼3.8 μm, λp2∼8.5 μm, and λp3∼23.2 μm) InAs/InGaAs quantum-dots-in-a-well detector. Applied Physics Letters, 83 (14). 2745-2747 doi:10.1063/1.1615838
Plain TextKrishna, S., Raghavan, S., von Winckel, G., Stintz, A., Ariyawansa, G., Matsik, S. G., Perera, A. G. U. (2003) Three-color (λp1∼3.8 μm, λp2∼8.5 μm, and λp3∼23.2 μm) InAs/InGaAs quantum-dots-in-a-well detector. Applied Physics Letters, 83 (14). 2745-2747 doi:10.1063/1.1615838
In(2003, October) Applied Physics Letters Vol. 83 (14) AIP Publishing

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Krishna, S., Raghavan, S., von Winckel, G., Rotella, P., Stintz, A., Morath, C. P., Le, D., Kennerly, S. W. (2003) Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K. Applied Physics Letters, 82 (16). 2574-2576 doi:10.1063/1.1567806
Amtout, A., Raghavan, S., Rotella, P., von Winckel, G., Stintz, A., Krishna, S. (2004) Theoretical modeling and experimental characterization of InAs∕InGaAs quantum dots in a well detector. Journal of Applied Physics, 96 (7). 3782-3786 doi:10.1063/1.1787618
Rinzan, M. B. M., Esaev, D. G., Perera, A. G. U., Matsik, S. G., Von Winckel, G., Stintz, A., Krishna, S. (2004) Free carrier absorption in Be-doped epitaxial AlGaAs thin films. Applied Physics Letters, 85 (22). 5236-5238 doi:10.1063/1.1829383
Perera, A. G. U., Matsik, S. G., Liu, H. C., Gao, M., Buchanan, M., Schaff, W. J., Yeo, W. (2000) GaAs/InGaAs quantum well infrared photodetector with a cutoff wavelength at 35 μm. Applied Physics Letters, 77 (5). 741-743 doi:10.1063/1.127104
Perera, A. G. U., Matsik, S. G., Jayaweera, P. V. V., Tennakone, K., Liu, H. C., Buchanan, M., Von Winckel, G., Stintz, A., Krishna, S. (2006) High operating temperature split-off band infrared detectors. Applied Physics Letters, 89 (13). 131118pp. doi:10.1063/1.2358106
Raghavan, S., Forman, D., Hill, P., Weisse-Bernstein, N. R., von Winckel, G., Rotella, P., Krishna, S., Kennerly, S. W., Little, J. W. (2004) Normal-incidence InAs/In0.15Ga0.85As quantum dots-in-a-well detector operating in the long-wave infrared atmospheric window (8–12 μm). Journal of Applied Physics, 96 (2). 1036-1039 doi:10.1063/1.1760832
Raghavan, S., Rotella, P., Stintz, A., Fuchs, B., Krishna, S., Morath, C., Cardimona, D. A., Kennerly, S. W. (2002) High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector. Applied Physics Letters, 81 (8). 1369-1371 doi:10.1063/1.1498009
Perera, A. G. U., Shen, W. Z., Matsik, S. G., Liu, H. C., Buchanan, M., Schaff, W. J. (1998) GaAs/AlGaAs quantum well photodetectors with a cutoff wavelength at 28 μm. Applied Physics Letters, 72 (13). 1596-1598 doi:10.1063/1.121126
Hu, Z. G., Rinzan, M. B. M., Matsik, S. G., Perera, A. G. U., Von Winckel, G., Stintz, A., Krishna, S. (2005) Optical characterizations of heavily doped p-type AlxGa1−xAs and GaAs epitaxial films at terahertz frequencies. Journal of Applied Physics, 97 (9). 93529pp. doi:10.1063/1.1894581
Ariyawansa, G., Aytac, Y., Perera, A. G. U., Matsik, S. G., Buchanan, M., Wasilewski, Z. R., Liu, H. C. (2010) Five-band bias-selectable integrated quantum well detector in an n-p-n architecture. Applied Physics Letters, 97 (23). 231102pp. doi:10.1063/1.3524236
Matsik, S. G., Rinzan, M. B. M., Esaev, D. G., Perera, A. G. U., Liu, H. C., Buchanan, M. (2004) 20 μm cutoff heterojunction interfacial work function internal photoemission detectors. Applied Physics Letters, 84 (18). 3435-3437 doi:10.1063/1.1634386
 
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