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Jasinski, J., Liliental-Weber, Z., Paduano, Q. S., Weyburne, D. W. (2003) Inversion domains in AlN grown on (0001) sapphire. Applied Physics Letters, 83 (14). 2811-2813 doi:10.1063/1.1616191

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Reference TypeJournal (article/letter/editorial)
TitleInversion domains in AlN grown on (0001) sapphire
JournalApplied Physics Letters
AuthorsJasinski, J.Author
Liliental-Weber, Z.Author
Paduano, Q. S.Author
Weyburne, D. W.Author
Year2003 (October 6)Volume83
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.1616191Search in ResearchGate
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Mindat Ref. ID8536488Long-form Identifiermindat:1:5:8536488:4
GUID0
Full ReferenceJasinski, J., Liliental-Weber, Z., Paduano, Q. S., Weyburne, D. W. (2003) Inversion domains in AlN grown on (0001) sapphire. Applied Physics Letters, 83 (14). 2811-2813 doi:10.1063/1.1616191
Plain TextJasinski, J., Liliental-Weber, Z., Paduano, Q. S., Weyburne, D. W. (2003) Inversion domains in AlN grown on (0001) sapphire. Applied Physics Letters, 83 (14). 2811-2813 doi:10.1063/1.1616191
In(2003, October) Applied Physics Letters Vol. 83 (14) AIP Publishing

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Jasinski, J., Liliental-Weber, Z., Lu, H., Schaff, W. J. (2004) V-shaped inversion domains in InN grown on c-plane sapphire. Applied Physics Letters, 85 (2). 233-235 doi:10.1063/1.1772863
Paduano, Q.S., Weyburne, D.W., Jasinski, J., Liliental-Weber, Z. (2004) Effect of initial process conditions on the structural properties of AlN films. Journal of Crystal Growth, 261 (2). 259-265 doi:10.1016/j.jcrysgro.2003.11.017
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Zakharov, N. D., Liliental‐Weber, Z., Swider, W., Brown, A. S., Metzger, R. (1993) Structure of Ga0.47In0.53As epitaxial layers grown on InP substrates at different temperatures. Applied Physics Letters, 63 (20). 2809-2811 doi:10.1063/1.110294
Look, D. C., Lu, H., Schaff, W. J., Jasinski, J., Liliental-Weber, Z. (2002) Donor and acceptor concentrations in degenerate InN. Applied Physics Letters, 80 (2). 258-260 doi:10.1063/1.1432742
Paduano, Qing, Weyburne, David (2003) Two-step Process for the Metalorganic Chemical Vapor Deposition Growth of High Quality AlN Films on Sapphire. Japanese Journal of Applied Physics, 42. 1590-1591 doi:10.1143/jjap.42.1590
Sang, L. W., Fang, H., Qin, Z. X., Wang, X. Q., Shen, B., Yang, Z. J., Zhang, G. Y., Zhang, X. P., You, L. P., Yu, D. P. (2009) Transmission electron microscopy investigation of inversion domain boundary in Al0.65Ga0.35N grown on AlN/sapphire template. Applied Physics Letters, 95 (11). 112106pp. doi:10.1063/1.3231443
Jasinski, J., Liliental-Weber, Z., Estrada, S., Hu, E. (2002) Microstructure of GaAs/GaN interfaces produced by direct wafer fusion. Applied Physics Letters, 81 (17). 3152-3154 doi:10.1063/1.1515116
Jasinski, J., Yu, K. M., Walukiewicz, W., Washburn, J., Liliental-Weber, Z. (2001) Influence of microstructure on electrical properties of diluted GaNxAs1−x formed by nitrogen implantation. Applied Physics Letters, 79 (7). 931-933 doi:10.1063/1.1390487
Liu, X., Prasad, A., Nishio, J., Weber, E. R., Liliental‐Weber, Z., Walukiewicz, W. (1995) Native point defects in low‐temperature‐grown GaAs. Applied Physics Letters, 67 (2). 279-281 doi:10.1063/1.114782
Romano, L. T., Northrup, J. E., O’Keefe, M. A. (1996) Inversion domains in GaN grown on sapphire. Applied Physics Letters, 69 (16). 2394-2396 doi:10.1063/1.117648
 
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