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Ryoo, Sung-Nam, Yoon, Soon-Gil, Kim, Seung-Hyun (2003) Improvement in ferroelectric properties of Pb(Zr0.35Ti0.65)O3 thin films using a Pb2Ru2O7−x conductive interfacial layer for ferroelectric random access memory application. Applied Physics Letters, 83 (14). 2880-2882 doi:10.1063/1.1616194

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Reference TypeJournal (article/letter/editorial)
TitleImprovement in ferroelectric properties of Pb(Zr0.35Ti0.65)O3 thin films using a Pb2Ru2O7−x conductive interfacial layer for ferroelectric random access memory application
JournalApplied Physics Letters
AuthorsRyoo, Sung-NamAuthor
Yoon, Soon-GilAuthor
Kim, Seung-HyunAuthor
Year2003 (October 6)Volume83
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.1616194Search in ResearchGate
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Mindat Ref. ID8536491Long-form Identifiermindat:1:5:8536491:8
GUID0
Full ReferenceRyoo, Sung-Nam, Yoon, Soon-Gil, Kim, Seung-Hyun (2003) Improvement in ferroelectric properties of Pb(Zr0.35Ti0.65)O3 thin films using a Pb2Ru2O7−x conductive interfacial layer for ferroelectric random access memory application. Applied Physics Letters, 83 (14). 2880-2882 doi:10.1063/1.1616194
Plain TextRyoo, Sung-Nam, Yoon, Soon-Gil, Kim, Seung-Hyun (2003) Improvement in ferroelectric properties of Pb(Zr0.35Ti0.65)O3 thin films using a Pb2Ru2O7−x conductive interfacial layer for ferroelectric random access memory application. Applied Physics Letters, 83 (14). 2880-2882 doi:10.1063/1.1616194
In(2003, October) Applied Physics Letters Vol. 83 (14) AIP Publishing

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Choi, K.J., Yoon, S.G. (2005) Effect of Pb2Ru2O7-x (PRO) conductive interfacial layers on ferroelectric properties of Pt/Pb(Zr0.35Ti0.65)O3/Pt capacitors for nonvolatile memory applications. Applied Physics A, 81. 855-859 doi:10.1007/s00339-004-2877-6
Sun, Ho-Jung, Choi, Eun Seok, Kweon, Soon Yong, Kim, Nam Kyeong, Yeom, Seung Jin, Roh, Jae-Sung, Sohn, Hyun-chul (2003) Pb(ZrxTi1-x)O3Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO2in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l1504
Oh, Young-Nam, Yoon, Soon-Gil (2004) Structural and ferroelectric properties of (Bi,Ce)4Ti3O12 thin films grown by pulsed laser deposition for ferroelectric random access memories. Applied Surface Science, 227. 187-192 doi:10.1016/j.apsusc.2003.11.064
Jung, Won Woong, Choi, Si Kyung, Kweon, Soon Yong, Yeom, Seung Jin (2003) Platinum(100) hillock growth in a Pt/Ti electrode stack for ferroelectric random access memory. Applied Physics Letters, 83 (11). 2160-2162 doi:10.1063/1.1610809
Min, Dae-Hong, Moon, Seung-Eon, Yoon, Sung-Min (2020) Design strategies for improvement in nonvolatile memory characteristics of metal-ferroelectric-metal-insulator-semiconductor capacitors using ferroelectric Hf0.5Zr0.5O2 thin films. Journal of Physics D: Applied Physics, 53. 115109pp. doi:10.1088/1361-6463/ab622d
Kim, Yeriaron, Kang, Seung Youl, Woo, Jiyong, Kim, Jeong Hun, Im, Jong-Pil, Yoon, Sung-Min, Moon, Seung Eon (2022) Improvement in nonvolatile memory operations for metal–ferroelectric–insulator–semiconductor capacitors using HfZrO2 and ZrO2 thin films as ferroelectric and insulator layers. Journal of Physics D: Applied Physics, 55 (33) 335101 doi:10.1088/1361-6463/ac7179
Shin, Woong-Chul, Yoon, Soon-Gil (2001) Improvement in ferroelectric properties of SrBi2Ta2O9 thin films with Bi2O3 buffer layers by liquid-delivery metalorganic chemical-vapor deposition. Applied Physics Letters, 79 (10). 1519-1521 doi:10.1063/1.1400077
Yoon, Ki Hyun, Shin, Hyun Cheol, Park, Jihoon, Kang, Dong Heon (2002) Effect of textured Pb(Zr1−xTix)O3 seed layer on fatigue properties of ferroelectric Pb0.99[(Zr0.6Sn0.4)0.85Ti0.15]0.98Nb0.02O3 thin films. Journal of Applied Physics, 92 (4). 2108-2111 doi:10.1063/1.1495894
Kim, Yong Tae, Yoon, Ki Hyun, Kim, Tae Heui, Park, Kyung Bong (1999) The dependence of electron emission on ferroelectric properties of Pb(ZrxTi1−x)O3. Applied Physics Letters, 75 (13). 1964-1966 doi:10.1063/1.124886
Na, So-Yeong, Yoon, So-Jung, Kang, Seung-Youl, Moon, Seung-Eon, Yoon, Sung-Min (2019) Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses. Japanese Journal of Applied Physics, 58 (7) 70907 doi:10.7567/1347-4065/ab2c62
Kim, Kinam, Lee, Sungyung (2006) Integration of lead zirconium titanate thin films for high density ferroelectric random access memory. Journal of Applied Physics, 100 (5). 51604pp. doi:10.1063/1.2337361
 
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