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Pey, K. L., Tung, C. H., Tang, L. J., Lin, W. H., Radhakrishnan, M. K. (2003) Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors. Applied Physics Letters, 83 (14). 2940-2942 doi:10.1063/1.1616195

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Reference TypeJournal (article/letter/editorial)
TitleSize difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors
JournalApplied Physics Letters
AuthorsPey, K. L.Author
Tung, C. H.Author
Tang, L. J.Author
Lin, W. H.Author
Radhakrishnan, M. K.Author
Year2003 (October 6)Volume83
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.1616195Search in ResearchGate
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Mindat Ref. ID8536492Long-form Identifiermindat:1:5:8536492:7
GUID0
Full ReferencePey, K. L., Tung, C. H., Tang, L. J., Lin, W. H., Radhakrishnan, M. K. (2003) Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors. Applied Physics Letters, 83 (14). 2940-2942 doi:10.1063/1.1616195
Plain TextPey, K. L., Tung, C. H., Tang, L. J., Lin, W. H., Radhakrishnan, M. K. (2003) Size difference in dielectric-breakdown-induced epitaxy in narrow n- and p-metal oxide semiconductor field effect transistors. Applied Physics Letters, 83 (14). 2940-2942 doi:10.1063/1.1616195
In(2003, October) Applied Physics Letters Vol. 83 (14) AIP Publishing

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Tung, Chih Hang, Pey, Kin Leong, Tang, Lei Jun, Radhakrishnan, M. K., Lin, Wen He, Palumbo, Felix, Lombardo, Salvatore (2003) Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient. Applied Physics Letters, 83 (11). 2223-2225 doi:10.1063/1.1611649
Liu, W. H., Pey, K. L., Raghavan, N., Wu, X., Bosman, M. (2012) Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications. Journal of Applied Physics, 111 (2). 24101pp. doi:10.1063/1.3676255
Ong, K. K., Pey, K. L., Lee, P. S., Wee, A. T. S., Wang, X. C., Tung, C. H., Tang, L. J., Chong, Y. F. (2006) Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor. Applied Physics Letters, 89 (12). 122113pp. doi:10.1063/1.2354446
Li, X., Liu, W. H., Raghavan, N., Bosman, M., Pey, K. L. (2010) Resistive switching in NiSi gate metal-oxide-semiconductor transistors. Applied Physics Letters, 97 (20). 202904pp. doi:10.1063/1.3516466
Yu, H. P., Pey, K. L., Choi, W. K., Antoniadis, D. A., Fitzgerald, E. A., Chi, D. Z., Tung, C. H. (2006) Work function tuning of n-channel metal-oxide field-effect transistors using interfacial yttrium layer in fully silicided nickel gate. Applied Physics Letters, 89 (23). 233520pp. doi:10.1063/1.2402943
Yang, C. W., Fang, Y. K., Chen, C. H., Chen, S. F., Lin, C. Y., Lin, C. S., Wang, M. F., Lin, Y. M., Hou, T. H., Chen, C. H., Yao, L. G., Chen, S. C., Liang, M. S. (2003) Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO2 dielectric. Applied Physics Letters, 83 (2). 308-310 doi:10.1063/1.1592634
Li, X., Tung, C. H., Pey, K. L. (2008) The nature of dielectric breakdown. Applied Physics Letters, 93 (7). 72903pp. doi:10.1063/1.2974792
Liu, W. H., Pey, K. L., Wu, X., Raghavan, N., Padovani, A., Larcher, L., Vandelli, L., Bosman, M., Kauerauf, T. (2011) Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal. Applied Physics Letters, 99 (23). 232909pp. doi:10.1063/1.3669525
Ranjan, R., Pey, K. L., Tung, C. H., Tang, L. J., Ang, D. S., Groeseneken, G., De Gendt, S., Bera, L. K. (2005) Breakdown-induced thermochemical reactions in HfO2 high-κ/polycrystalline silicon gate stacks. Applied Physics Letters, 87 (24). 242907pp. doi:10.1063/1.2146071
Chang, Y. C., Chang, W. H., Chiu, H. C., Tung, L. T., Lee, C. H., Shiu, K. H., Hong, M., Kwo, J., Hong, J. M., Tsai, C. C. (2008) Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric. Applied Physics Letters, 93 (5). 53504pp. doi:10.1063/1.2969282
Li, X., Tung, C. H., Pey, K. L., Lo, V. L. (2009) The physical origin of random telegraph noise after dielectric breakdown. Applied Physics Letters, 94 (13). 132904pp. doi:10.1063/1.3114410
 
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