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Nam, K. B., Nakarmi, M. L., Li, J., Lin, J. Y., Jiang, H. X. (2003) Photoluminescence studies of Si-doped AlN epilayers. Applied Physics Letters, 83 (14). 2787-2789 doi:10.1063/1.1616199

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence studies of Si-doped AlN epilayers
JournalApplied Physics Letters
AuthorsNam, K. B.Author
Nakarmi, M. L.Author
Li, J.Author
Lin, J. Y.Author
Jiang, H. X.Author
Year2003 (October 6)Volume83
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.1616199Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8536494Long-form Identifiermindat:1:5:8536494:5
GUID0
Full ReferenceNam, K. B., Nakarmi, M. L., Li, J., Lin, J. Y., Jiang, H. X. (2003) Photoluminescence studies of Si-doped AlN epilayers. Applied Physics Letters, 83 (14). 2787-2789 doi:10.1063/1.1616199
Plain TextNam, K. B., Nakarmi, M. L., Li, J., Lin, J. Y., Jiang, H. X. (2003) Photoluminescence studies of Si-doped AlN epilayers. Applied Physics Letters, 83 (14). 2787-2789 doi:10.1063/1.1616199
In(2003, October) Applied Physics Letters Vol. 83 (14) AIP Publishing

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Li, J., Nam, K. B., Nakarmi, M. L., Lin, J. Y., Jiang, H. X. (2002) Band-edge photoluminescence of AlN epilayers. Applied Physics Letters, 81 (18). 3365-3367 doi:10.1063/1.1518558
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Nepal, N., Nam, K. B., Nakarmi, M. L., Lin, J. Y., Jiang, H. X., Zavada, J. M., Wilson, R. G. (2004) Optical properties of the nitrogen vacancy in AlN epilayers. Applied Physics Letters, 84 (7). 1090-1092 doi:10.1063/1.1648137
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Fan, Z. Y., Li, J., Nakarmi, M. L., Lin, J. Y., Jiang, H. X. (2006) AlGaN∕GaN∕AlN quantum-well field-effect transistors with highly resistive AlN epilayers. Applied Physics Letters, 88 (7). 73513pp. doi:10.1063/1.2174847
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