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Martinelli, Lucio, Marzegalli, A., Raiteri, P., Bollani, M., Montalenti, F., Miglio, Leo, Chrastina, D., Isella, G., von Känel, H. (2004) Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data. Applied Physics Letters, 84 (15). 2895-2897 doi:10.1063/1.1705727

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Reference TypeJournal (article/letter/editorial)
TitleFormation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data
JournalApplied Physics Letters
AuthorsMartinelli, LucioAuthor
Marzegalli, A.Author
Raiteri, P.Author
Bollani, M.Author
Montalenti, F.Author
Miglio, LeoAuthor
Chrastina, D.Author
Isella, G.Author
von Känel, H.Author
Year2004 (April 12)Volume84
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.1705727Search in ResearchGate
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Mindat Ref. ID8538382Long-form Identifiermindat:1:5:8538382:5
GUID0
Full ReferenceMartinelli, Lucio, Marzegalli, A., Raiteri, P., Bollani, M., Montalenti, F., Miglio, Leo, Chrastina, D., Isella, G., von Känel, H. (2004) Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data. Applied Physics Letters, 84 (15). 2895-2897 doi:10.1063/1.1705727
Plain TextMartinelli, Lucio, Marzegalli, A., Raiteri, P., Bollani, M., Montalenti, F., Miglio, Leo, Chrastina, D., Isella, G., von Känel, H. (2004) Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data. Applied Physics Letters, 84 (15). 2895-2897 doi:10.1063/1.1705727
In(2004, April) Applied Physics Letters Vol. 84 (15) AIP Publishing


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