Vote for your favorite mineral in #MinCup25! - Sanidine vs. Hematite
It's a pair of often-overlooked classics as potassium feldspar sanidine competes with iron ore hematite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Wu, J. W., You, J. W., Ma, H. C., Cheng, C. C., Chang, C. S., Huang, G. W., Wang, T. (2004) Valence-band tunneling induced low frequency noise in ultrathin oxide (15Å) n-type metal-oxide-semiconductor field effect transistors. Applied Physics Letters, 85 (21). 5076-5077 doi:10.1063/1.1827930

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleValence-band tunneling induced low frequency noise in ultrathin oxide (15Å) n-type metal-oxide-semiconductor field effect transistors
JournalApplied Physics Letters
AuthorsWu, J. W.Author
You, J. W.Author
Ma, H. C.Author
Cheng, C. C.Author
Chang, C. S.Author
Huang, G. W.Author
Wang, T.Author
Year2004 (November 22)Volume85
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.1827930Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8540892Long-form Identifiermindat:1:5:8540892:0
GUID0
Full ReferenceWu, J. W., You, J. W., Ma, H. C., Cheng, C. C., Chang, C. S., Huang, G. W., Wang, T. (2004) Valence-band tunneling induced low frequency noise in ultrathin oxide (15Å) n-type metal-oxide-semiconductor field effect transistors. Applied Physics Letters, 85 (21). 5076-5077 doi:10.1063/1.1827930
Plain TextWu, J. W., You, J. W., Ma, H. C., Cheng, C. C., Chang, C. S., Huang, G. W., Wang, T. (2004) Valence-band tunneling induced low frequency noise in ultrathin oxide (15Å) n-type metal-oxide-semiconductor field effect transistors. Applied Physics Letters, 85 (21). 5076-5077 doi:10.1063/1.1827930
In(2004, November) Applied Physics Letters Vol. 85 (21) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Yang, Y.-J., Ho, W. S., Huang, C.-F., Chang, S. T., Liu, C. W. (2007) Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 91 (10). 102103pp. doi:10.1063/1.2779845
Lan, H.-S., Chen, Y.-T., Hsu, William, Chang, H.-C., Lin, J.-Y., Chang, W.-C., Liu, C. W. (2011) Electron scattering in Ge metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 99 (11). 112109pp. doi:10.1063/1.3640237
Low, Tony, Li, M. F., Yeo, Y. C., Fan, W. J., Ng, S. T., Kwong, D. L. (2005) Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 98 (2). 24504pp. doi:10.1063/1.1948528
Mercha, A., Simoen, E., van Meer, H., Claeys, C. (2003) Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal–oxide–semiconductor field-effect transistors. Applied Physics Letters, 82 (11). 1790-1792 doi:10.1063/1.1561575
Chen, Y. J., Hsu, W. C., Lee, C. S., Wang, T. B., Tseng, C. H., Huang, J. C., Huang, D. H., Wu, C. L. (2004) Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors. Applied Physics Letters, 85 (21). 5087-5089 doi:10.1063/1.1823600
Chen, M. C., Ku, S. H., Chan, C. T., Wang, Tahui (2004) Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors. Journal of Applied Physics, 96 (4). 2297-2300 doi:10.1063/1.1773384
Lukyanchikova, N. B., Petrichuk, M. V., Garbar, N., Mercha, A., Simoen, E., Claeys, C. (2003) Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal–oxide–semiconductor field-effect transistors. Journal of Applied Physics, 94 (7). 4461-4469 doi:10.1063/1.1604452
Chen, Y.-T., Lan, H.-S., Hsu, W., Fu, Y.-C., Lin, J.-Y., Liu, C. W. (2011) Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates. Applied Physics Letters, 99 (2). 22106pp. doi:10.1063/1.3604417
Ho, W. S., Lin, C.-H., Cheng, T.-H., Hsu, W. W., Chen, Y.-Y., Kuo, P.-S., Liu, C. W. (2009) Narrow-band metal-oxide-semiconductor photodetector. Applied Physics Letters, 94 (6). 61114pp. doi:10.1063/1.3077313
Huang, M. Q., Lai, P. T., Ma, Z. J., Wong, H., Cheng, Y. C. (1992) Improvement of punchthrough‐induced gate‐oxide breakdown inn‐channel metal‐oxide‐semiconductor field‐effect transistors using rapid thermal nitridation. Applied Physics Letters, 61 (4). 453-455 doi:10.1063/1.107882
You, S. L., Huang, C. C., Wang, C. J., Ho, H. C., Kwo, J., Lee, W. C., Lee, K. Y., Wu, Y. D., Lee, Y. J., Hong, M. (2008) Inelastic electron tunneling spectroscopy study of metal-oxide-semiconductor diodes based on high-κ gate dielectrics. Applied Physics Letters, 92 (1). 12113pp. doi:10.1063/1.2831717
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 7, 2025 16:17:30
Go to top of page