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Mingo, N. (2004) Thermoelectric figure of merit of II–VI semiconductor nanowires. Applied Physics Letters, 85 (24). 5986-5988 doi:10.1063/1.1829391

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Reference TypeJournal (article/letter/editorial)
TitleThermoelectric figure of merit of II–VI semiconductor nanowires
JournalApplied Physics Letters
AuthorsMingo, N.Author
Year2004 (December 13)Volume85
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.1829391Search in ResearchGate
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Mindat Ref. ID8541128Long-form Identifiermindat:1:5:8541128:9
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Full ReferenceMingo, N. (2004) Thermoelectric figure of merit of II–VI semiconductor nanowires. Applied Physics Letters, 85 (24). 5986-5988 doi:10.1063/1.1829391
Plain TextMingo, N. (2004) Thermoelectric figure of merit of II–VI semiconductor nanowires. Applied Physics Letters, 85 (24). 5986-5988 doi:10.1063/1.1829391
In(2004, December) Applied Physics Letters Vol. 85 (24) AIP Publishing

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Mingo, N. (2006) Erratum: Thermoelectric figure of merit of II–VI semiconductor nanowires [Appl. Phys. Lett. 85, 5986 (2004)]. Applied Physics Letters, 88 (13). 139901pp. doi:10.1063/1.2192640
Mingo, N. (2004) Thermoelectric figure of merit and maximum power factor in III–V semiconductor nanowires. Applied Physics Letters, 84 (14). 2652-2654 doi:10.1063/1.1695629
Mingo, N. (2006) Erratum: “Thermoelectric figure of merit and maximum power factor in III–V semiconductor nanowires” [Appl. Phys. Lett. 84, 2652 (2004)]. Applied Physics Letters, 88 (14). 149902pp. doi:10.1063/1.2192639
Cornett, Jane E., Rabin, Oded (2011) Thermoelectric figure of merit calculations for semiconducting nanowires. Applied Physics Letters, 98 (18). 182104pp. doi:10.1063/1.3585659
Shi, Lihong, Yao, Donglai, Zhang, Gang, Li, Baowen (2010) Large thermoelectric figure of merit in Si1−xGex nanowires. Applied Physics Letters, 96 (17). 173108pp. doi:10.1063/1.3421543
Shi, Lihong, Jiang, Jinwu, Zhang, Gang, Li, Baowen (2012) High thermoelectric figure of merit in silicon-germanium superlattice structured nanowires. Applied Physics Letters, 101 (23). 233114pp. doi:10.1063/1.4769443
Moyzhes, B., Nemchinsky, V. (1998) Thermoelectric figure of merit of metal–semiconductor barrier structure based on energy relaxation length. Applied Physics Letters, 73 (13). 1895-1897 doi:10.1063/1.122318
Saeed, Y., Singh, N., Schwingenschlögl, U. (2014) Enhanced thermoelectric figure of merit in strained Tl-doped Bi2Se3. Applied Physics Letters, 105 (3). 31915pp. doi:10.1063/1.4890858
Mingo, N., Broido, D. A. (2004) Lattice Thermal Conductivity Crossovers in Semiconductor Nanowires. Physical Review Letters, 93 (24). doi:10.1103/physrevlett.93.246106
Rabina, Oded, Lin, Yu-Ming, Dresselhaus, Mildred S. (2001) Anomalously high thermoelectric figure of merit in Bi1−xSbx nanowires by carrier pocket alignment. Applied Physics Letters, 79 (1). 81-83 doi:10.1063/1.1379365
Gowthamaraju, S., Bhobe, P. A., Nigam, A. K. (2018) Improved figure of merit and other thermoelectric properties of Sn1−xCuxSe. Applied Physics Letters, 113 (24). 243904pp. doi:10.1063/1.5051227
 
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