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Paul, S., Flewitt, A. J., Milne, W. I., Robertson, J. (2005) Instability measurements in amorphous hydrogenated silicon using capacitance-voltage techniques. Applied Physics Letters, 86 (20). 202110pp. doi:10.1063/1.1928315

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Reference TypeJournal (article/letter/editorial)
TitleInstability measurements in amorphous hydrogenated silicon using capacitance-voltage techniques
JournalApplied Physics Letters
AuthorsPaul, S.Author
Flewitt, A. J.Author
Milne, W. I.Author
Robertson, J.Author
Year2005 (May 16)Volume86
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1928315Search in ResearchGate
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Mindat Ref. ID8542925Long-form Identifiermindat:1:5:8542925:1
GUID0
Full ReferencePaul, S., Flewitt, A. J., Milne, W. I., Robertson, J. (2005) Instability measurements in amorphous hydrogenated silicon using capacitance-voltage techniques. Applied Physics Letters, 86 (20). 202110pp. doi:10.1063/1.1928315
Plain TextPaul, S., Flewitt, A. J., Milne, W. I., Robertson, J. (2005) Instability measurements in amorphous hydrogenated silicon using capacitance-voltage techniques. Applied Physics Letters, 86 (20). 202110pp. doi:10.1063/1.1928315
In(2005, May) Applied Physics Letters Vol. 86 (20) AIP Publishing

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Flewitt, A. J., Robertson, J., Milne, W. I. (1999) Growth mechanism of hydrogenated amorphous silicon studied by in situ scanning tunneling microscopy. Journal of Applied Physics, 85 (12). 8032-8039 doi:10.1063/1.370639
Lin, Shufan, Flewitt, Andrew J., Milne, William I., Wehrspohn, Ralf B., Powell, Martin J. (2005) Stability of fully deuterated amorphous silicon thin-film transistors. Applied Physics Letters, 86 (6). 63513pp. doi:10.1063/1.1862755
Lahri, R., Han, M. K., Anderson, W. A. (1983) Modeling of hydrogenated amorphous silicon Schottky structures using capacitanceā€voltage and conductanceā€voltage measurements. Journal of Applied Physics, 54 (2). 928-931 doi:10.1063/1.332056
Conway, N. M. J., Ilie, A., Robertson, J., Milne, W. I., Tagliaferro, A. (1998) Reduction in defect density by annealing in hydrogenated tetrahedral amorphous carbon. Applied Physics Letters, 73 (17). 2456-2458 doi:10.1063/1.122480
Rodil, S. E., Ferrari, A. C., Robertson, J., Milne, W. I. (2001) Raman and infrared modes of hydrogenated amorphous carbon nitride. Journal of Applied Physics, 89 (10). 5425-5430 doi:10.1063/1.1365076
Ilie, A., Hart, A., Flewitt, A. J., Robertson, J., Milne, W. I. (2000) Effect of work function and surface microstructure on field emission of tetrahedral amorphous carbon. Journal of Applied Physics, 88 (10). 6002-6010 doi:10.1063/1.1314874
Ilie, A., Conway, N. M. J., Kleinsorge, B., Robertson, J., Milne, W. I. (1998) Photoconductivity and electronic transport in tetrahedral amorphous carbon and hydrogenated tetrahedral amorphous carbon. Journal of Applied Physics, 84 (10). 5575-5582 doi:10.1063/1.368602
Sakata, I., Ishida, T., Okazaki, S., Saitoh, T., Yamanaka, M., Hayashi, Y. (1987) Characterization of hydrogenated amorphous silicon by capacitanceā€voltage and surface photovoltage measurements using liquid Schottky barriers. Journal of Applied Physics, 61 (5). 1916-1927 doi:10.1063/1.338038
Kiani, Ahmed, Hasko, David G., Milne, William I., Flewitt, Andrew J. (2013) Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model. Applied Physics Letters, 102 (15). 152102pp. doi:10.1063/1.4801991
Satyanarayana, B. S., Hart, A., Milne, W. I., Robertson, J. (1997) Field emission from tetrahedral amorphous carbon. Applied Physics Letters, 71 (10). 1430-1432 doi:10.1063/1.119915
Wehrspohn, Ralf B., Lin, Shufan, Flewitt, Andrew J., Milne, William I., Powell, Martin J. (2005) Absence of enhanced stability in fully deuterated amorphous silicon thin-film transistors. Journal of Applied Physics, 98 (5). 54505pp. doi:10.1063/1.2039267
 
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