Nath, R., Soo, C. W., Boothroyd, C. B., Yeadon, M., Chi, D. Z., Sun, H. P., Chen, Y. B., Pan, X. Q., Foo, Y. L. (2005) NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study. Applied Physics Letters, 86 (20). 201908pp. doi:10.1063/1.1929100

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Reference Type	Journal (article/letter/editorial)
Title	NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study
Journal	Applied Physics Letters
Authors	Nath, R.		Author
	Soo, C. W.		Author
	Boothroyd, C. B.		Author
	Yeadon, M.		Author
	Chi, D. Z.		Author
	Sun, H. P.		Author
	Chen, Y. B.		Author
	Pan, X. Q.		Author
	Foo, Y. L.		Author
Year	2005 (May 16)	Volume	86
Issue	20
Publisher	AIP Publishing
DOI	doi:10.1063/1.1929100Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8542945	Long-form Identifier	mindat:1:5:8542945:5
GUID	0
Full Reference	Nath, R., Soo, C. W., Boothroyd, C. B., Yeadon, M., Chi, D. Z., Sun, H. P., Chen, Y. B., Pan, X. Q., Foo, Y. L. (2005) NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study. Applied Physics Letters, 86 (20). 201908pp. doi:10.1063/1.1929100
Plain Text	Nath, R., Soo, C. W., Boothroyd, C. B., Yeadon, M., Chi, D. Z., Sun, H. P., Chen, Y. B., Pan, X. Q., Foo, Y. L. (2005) NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study. Applied Physics Letters, 86 (20). 201908pp. doi:10.1063/1.1929100
In	(2005, May) Applied Physics Letters Vol. 86 (20) AIP Publishing

	Sun, H. P., Chen, Y. B., Pan, X. Q., Chi, D. Z., Nath, R., Foo, Y. L. (2005) Formation and evolution of epitaxial Co[sub 5]Ge[sub 7] on Ge(001) surface by reactive deposition inside an ultrahigh-vacuum transmission electron microscope. Applied Physics Letters, 86 (7). 71904pp. doi:10.1063/1.1862331
	Sun, H. P., Chen, Y. B., Pan, X. Q., Chi, D. Z., Nath, R., Foo, Y. L. (2005) Formation and evolution of epitaxial Co5Ge7 film on Ge (001) surface by solid-state reaction in an in situ ultrahigh-vacuum transmission electron microscope. Applied Physics Letters, 87 (21). 211909pp. doi:10.1063/1.2135387
	*Sun, H P, Chen, Y B, Chi, D Z, Nath, R, Foo, Y, Pan, X Q (2005) Reaction of Co with Ge Studied by In-situ TEM. Microscopy and Microanalysis, 11. doi:10.1017/s143192760550758x*
	Tian, W., Sun, H. P., Pan, X. Q., Yu, J. H., Yeadon, M., Boothroyd, C. B., Feng, Y. P., Lukaszew, R. A., Clarke, R. (2005) Hexagonal close-packed Ni nanostructures grown on the (001) surface of MgO. Applied Physics Letters, 86 (13). 131915pp. doi:10.1063/1.1890472
	Sun, H P, Tian, W, Chen, Y B, Yu, J H, Yeadon, M, Boothroyd, C B, Lukaszew, R A, Clarke, R, Pan, X Q (2004) Growth and Structural Evolution of Nanosized Ni on (001) MgO by in situ TEM. Microscopy and Microanalysis, 10. 272-273 doi:10.1017/s1431927604885726
	Balakrisnan, B., Tan, C. C., Liew, S. L., Lim, P. C., Goh, G. K. L., Foo, Y. L., Chi, D. Z. (2005) Texture of NiGe on Ge(001) and its evolution with formation temperature. Applied Physics Letters, 87 (24). 241922pp. doi:10.1063/1.2135210
	Chen, H., Han, P., Huang, X. D., Hu, L. Q., Shi, Y., Zheng, Y. D. (1996) Semiconducting Ge–Si–Fe alloy grown on Si(100) substrate by reactive deposition epitaxy. Applied Physics Letters, 69 (13). 1912-1914 doi:10.1063/1.117619
	Li, Zhi-Peng, Tok, Eng Soon, Foo, Yong Lim (2010) In situ ultrahigh vacuum transmission electron microscopy study of quasi-one-dimensional island decay on isotropic Ge(001) surface. Journal of Applied Physics, 108 (8). 84310pp. doi:10.1063/1.3496622
	*Chong, R. K. K., Yeadon, M., Choi, W. K., Stach, E. A., Boothroyd, C. B. (2003) Nitride-mediated epitaxy of CoSi2 on Si(001). Applied Physics Letters, 82 (12). 1833-1835 doi:10.1063/1.1555708*
	Yang, H., Chi, Z. H., Yao, L. D., Zhang, W., Li, F. Y., Jin, C. Q., Yu, R. C. (2006) Structural defects in multiferroic BiMnO3 studied by transmission electron microscopy and electron energy-loss spectroscopy. Journal of Applied Physics, 100 (4). 44105pp. doi:10.1063/1.2245199
	Pan, Z., Wang, Y. T., Li, L. H., Wang, H., Wei, Z., Zhou, Z. Q., Lin, Y. W. (1999) Strain relaxation of GaNxAs1−x on GaAs (001) grown by molecular-beam epitaxy. Journal of Applied Physics, 86 (9). 5302-5304 doi:10.1063/1.371516

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