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Boero, Mauro, Oshiyama, Atsushi, Silvestrelli, Pier Luigi, Murakami, Kouichi (2005) Free energy molecular dynamics simulations of pulsed-laser-irradiated SiO2: Si–Si bond formation in a matrix of SiO2. Applied Physics Letters, 86 (20). 201910pp. doi:10.1063/1.1929879

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Reference TypeJournal (article/letter/editorial)
TitleFree energy molecular dynamics simulations of pulsed-laser-irradiated SiO2: Si–Si bond formation in a matrix of SiO2
JournalApplied Physics Letters
AuthorsBoero, MauroAuthor
Oshiyama, AtsushiAuthor
Silvestrelli, Pier LuigiAuthor
Murakami, KouichiAuthor
Year2005 (May 16)Volume86
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1929879Search in ResearchGate
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Mindat Ref. ID8542953Long-form Identifiermindat:1:5:8542953:4
GUID0
Full ReferenceBoero, Mauro, Oshiyama, Atsushi, Silvestrelli, Pier Luigi, Murakami, Kouichi (2005) Free energy molecular dynamics simulations of pulsed-laser-irradiated SiO2: Si–Si bond formation in a matrix of SiO2. Applied Physics Letters, 86 (20). 201910pp. doi:10.1063/1.1929879
Plain TextBoero, Mauro, Oshiyama, Atsushi, Silvestrelli, Pier Luigi, Murakami, Kouichi (2005) Free energy molecular dynamics simulations of pulsed-laser-irradiated SiO2: Si–Si bond formation in a matrix of SiO2. Applied Physics Letters, 86 (20). 201910pp. doi:10.1063/1.1929879
In(2005, May) Applied Physics Letters Vol. 86 (20) AIP Publishing

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Boero, Mauro, Oshiyama, Atsushi, Luigi Silvestrelli, Pier, Murakami, Kouichi (2006) First-principle molecular dynamics study of bond disruption and formation in SiO2 upon irradiation. Physica B: Condensed Matter, 376. 945-949 doi:10.1016/j.physb.2005.12.235
BOERO, MAURO, OSHIYAMA, ATSUSHI, SILVESTRELLI, PIER LUIGI (2004) E' CENTERS IN SILICON DIOXIDE: FIRST-PRINCIPLES MOLECULAR DYNAMICS STUDIES. Modern Physics Letters B, 18. 707-724 doi:10.1142/s0217984904007256
Boero, Mauro, Oshiyama, Atsushi, Silvestrelli, Pier Luigi (2003) E′Centers inαQuartz in the Absence of Oxygen Vacancies: A First-Principles Molecular-Dynamics Study. Physical Review Letters, 91 (20). doi:10.1103/physrevlett.91.206401
Koizumi, Kenichi, Boero, Mauro, Shigeta, Yasuteru, Oshiyama, Atsushi (2012) Microscopic mechanisms of initial oxidation of Si(100): Reaction pathways and free-energy barriers. Physical Review B, 85 (20) doi:10.1103/physrevb.85.205314
Ogura, Atsushi, Aizaki, Naoaki (1989) Si/SiO2interface structures in laser‐recrystallized Si on SiO2. Applied Physics Letters, 55 (6). 547-549 doi:10.1063/1.102433
Uchida, Noriyuki, Mikami, Youhei, Kintoh, Hiroshi, Murakami, Kouichi, Fukata, Naoki, Mitome, Masanori, Hase, Muneaki, Kitajima, Masahiro (2008) Site-selective formation of Si nanocrystal in SiO2 by femtosecond laser irradiation and Al deoxidization effects. Applied Physics Letters, 92 (15). 153112pp. doi:10.1063/1.2905289
Khriachtchev, Leonid, Räsänen, Markku, Novikov, Sergei (2006) Laser-controlled stress of Si nanocrystals in a free-standing Si∕SiO2 superlattice. Applied Physics Letters, 88 (1). 13102pp. doi:10.1063/1.2161399
Silvestrelli, Pier Luigi, Parrinello, Michele (1998) Ab initio molecular dynamics simulation of laser melting of graphite. Journal of Applied Physics, 83 (5). 2478-2483 doi:10.1063/1.366989
Koizumi, Kenichi, Boero, Mauro, Shigeta, Yasuteru, Oshiyama, Atsushi (2011) Self-diffusion in crystalline silicon: A Car-Parrinello molecular dynamics study. Physical Review B, 84 (20) doi:10.1103/physrevb.84.205203
Papernov, S., Schmid, A. W. (2005) Two mechanisms of crater formation in ultraviolet-pulsed-laser irradiated SiO2 thin films with artificial defects. Journal of Applied Physics, 97 (11). 114906pp. doi:10.1063/1.1924878
Muraoka, Kouichi (2002) Reaction steps of silicidation in ZrO2/SiO2/Si layered structure. Applied Physics Letters, 80 (24). 4516-4518 doi:10.1063/1.1486046
 
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