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De Angelis, F., Cipolloni, S., Mariucci, L., Fortunato, G. (2005) High-field-effect-mobility pentacene thin-film transistors with polymethylmetacrylate buffer layer. Applied Physics Letters, 86 (20). 203505pp. doi:10.1063/1.1931833

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Reference TypeJournal (article/letter/editorial)
TitleHigh-field-effect-mobility pentacene thin-film transistors with polymethylmetacrylate buffer layer
JournalApplied Physics Letters
AuthorsDe Angelis, F.Author
Cipolloni, S.Author
Mariucci, L.Author
Fortunato, G.Author
Year2005 (May 16)Volume86
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1931833Search in ResearchGate
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Mindat Ref. ID8542977Long-form Identifiermindat:1:5:8542977:4
GUID0
Full ReferenceDe Angelis, F., Cipolloni, S., Mariucci, L., Fortunato, G. (2005) High-field-effect-mobility pentacene thin-film transistors with polymethylmetacrylate buffer layer. Applied Physics Letters, 86 (20). 203505pp. doi:10.1063/1.1931833
Plain TextDe Angelis, F., Cipolloni, S., Mariucci, L., Fortunato, G. (2005) High-field-effect-mobility pentacene thin-film transistors with polymethylmetacrylate buffer layer. Applied Physics Letters, 86 (20). 203505pp. doi:10.1063/1.1931833
In(2005, May) Applied Physics Letters Vol. 86 (20) AIP Publishing

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De Angelis, F., Mariucci, L., Cipolloni, S., Fortunato, G. (2006) Analysis of electrical characteristics of high performance pentacene thin-film transistors with PMMA buffer layer. Journal of Non-Crystalline Solids, 352 (9) 1765-1768 doi:10.1016/j.jnoncrysol.2005.11.123
De Angelis, F., Cipolloni, S., Mariucci, L., Fortunato, G. (2006) Aging effects in pentacene thin-film transistors: Analysis of the density of states modification. Applied Physics Letters, 88 (19). 193508pp. doi:10.1063/1.2203742
Toccoli, T., Pallaoro, A., Coppedè, N., Iannotta, S., De Angelis, F., Mariucci, L., Fortunato, G. (2006) Controlling field-effect mobility in pentacene-based transistors by supersonic molecular-beam deposition. Applied Physics Letters, 88 (13). 132106pp. doi:10.1063/1.2187494
Mariucci, L., Cipolloni, S., Simeone, D., Cuscuna, M., Maiolo, L., Minotti, A., Pecora, A., Valletta, A., Fortunato, G. (2009) Water-Related Instabilities in Pentacene Thin-Film Transistors. Journal of the Korean Physical Society, 54 (9). 505-509 doi:10.3938/jkps.54.505
Valletta, A., Gaucci, P., Mariucci, L., Fortunato, G., Brotherton, S. D. (2004) Kink effect in short-channel polycrystalline silicon thin-film transistors. Applied Physics Letters, 85 (15). 3113-3115 doi:10.1063/1.1806252
De Angelis, F., Toccoli, T., Pallaoro, A., Coppedè, N., Mariucci, L., Fortunato, G., Iannotta, S. (2004) SuMBE based organic thin film transistors. Synthetic Metals, 146 (3). 291-295 doi:10.1016/j.synthmet.2004.08.008
Valletta, A., Mariucci, L., Fortunato, G., Brotherton, S. D. (2003) Surface-scattering effects in polycrystalline silicon thin-film transistors. Applied Physics Letters, 82 (18). 3119-3121 doi:10.1063/1.1571960
Mariucci, L., Valletta, A., Gaucci, P., Fortunato, G., Templier, F. (2006) Hot-carrier effects in p-channel polycrystalline silicon thin film transistors. Applied Physics Letters, 89 (18). 183518pp. doi:10.1063/1.2378587
Valletta, A., Mariucci, L., Bonfiglietti, A., Fortunato, G., Brotherton, S. D. (2005) Dopant and defect interactions in polycrystalline silicon thin-film transistors. Journal of Applied Physics, 97 (10). 104515pp. doi:10.1063/1.1906293
Cui, Tianhong, Liang, Guirong (2005) Dual-gate pentacene organic field-effect transistors based on a nanoassembled SiO2 nanoparticle thin film as the gate dielectric layer. Applied Physics Letters, 86 (6). 64102pp. doi:10.1063/1.1861126
Stadlober, Barbara, Zirkl, Martin, Beutl, Michael, Leising, Günther, Bauer-Gogonea, Simona, Bauer, Siegfried (2005) High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer film gate dielectric. Applied Physics Letters, 86 (24). 242902pp. doi:10.1063/1.1946190
 
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