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Chan, Paddy K. L., Pipe, Kevin P., Qin, Guoxuan, Ma, Zhenqiang (2006) Thermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors. Applied Physics Letters, 89 (23). 233521pp. doi:10.1063/1.2402947

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Reference TypeJournal (article/letter/editorial)
TitleThermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors
JournalApplied Physics Letters
AuthorsChan, Paddy K. L.Author
Pipe, Kevin P.Author
Qin, GuoxuanAuthor
Ma, ZhenqiangAuthor
Year2006 (December 4)Volume89
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.2402947Search in ResearchGate
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Mindat Ref. ID8551251Long-form Identifiermindat:1:5:8551251:5
GUID0
Full ReferenceChan, Paddy K. L., Pipe, Kevin P., Qin, Guoxuan, Ma, Zhenqiang (2006) Thermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors. Applied Physics Letters, 89 (23). 233521pp. doi:10.1063/1.2402947
Plain TextChan, Paddy K. L., Pipe, Kevin P., Qin, Guoxuan, Ma, Zhenqiang (2006) Thermoreflectance imaging of current dynamics in high power SiGe heterojunction bipolar transistors. Applied Physics Letters, 89 (23). 233521pp. doi:10.1063/1.2402947
In(2006, December) Applied Physics Letters Vol. 89 (23) AIP Publishing

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Qin, Guoxuan, Wang, Guogong, McCaughan, Leon, Ma, Zhenqiang (2010) Superiority of common-base to common-emitter heterojunction bipolar transistors. Applied Physics Letters, 97 (13). 133506pp. doi:10.1063/1.3491797
Chan, P. K. L., Pipe, K. P., Plant, J. J., Swint, R. B., Juodawlkis, P. W. (2006) Temperature mapping and thermal lensing in large-mode, high-power laser diodes. Applied Physics Letters, 89 (20). 201110pp. doi:10.1063/1.2388884
Qin, Guoxuan, Zhou, Han, Ramayya, Edwin B., Ma, Zhenqiang, Knezevic, Irena (2009) Electron mobility in scaled silicon metal-oxide-semiconductor field-effect transistors on off-axis substrates. Applied Physics Letters, 94 (7). 73504pp. doi:10.1063/1.3085961
Qin, Guoxuan, Yuan, Hao-Chih, Celler, George K., Ma, Jianguo, Ma, Zhenqiang (2010) Impact of strain on radio frequency characteristics of flexible microwave single-crystalline silicon nanomembrane p-intrinsic-n diodes on plastic substrates. Applied Physics Letters, 97 (23). 233110pp. doi:10.1063/1.3521409
Yuan, Hao-Chih, Qin, Guoxuan, Celler, George K., Ma, Zhenqiang (2009) Bendable high-frequency microwave switches formed with single-crystal silicon nanomembranes on plastic substrates. Applied Physics Letters, 95 (4). 43109pp. doi:10.1063/1.3176407
Lanzerotti, L. D., Sturm, J. C., Stach, E., Hull, R., Buyuklimanli, T., Magee, C. (1997) Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation. Applied Physics Letters, 70 (23). 3125-3127 doi:10.1063/1.119110
Makimoto, Toshiki, Yamauchi, Yoshiharu, Kumakura, Kazuhide (2004) High-power characteristics of GaN/InGaN double heterojunction bipolar transistors. Applied Physics Letters, 84 (11). 1964-1966 doi:10.1063/1.1675934
Gao, Guang‐bo, Fan, Zhi‐fang, Morkoç, H. (1991) Analysis of cut‐off frequency roll‐off at high currents in SiGe double‐heterojunction bipolar transistors. Applied Physics Letters, 58 (25). 2951-2953 doi:10.1063/1.104732
Mitchell, M. J., Ashburn, P., Hemment, P. L. F. (2002) Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation. Journal of Applied Physics, 92 (11). 6924-6926 doi:10.1063/1.1518770
Yuan, Hao-Chih, Ma, Zhenqiang (2006) Microwave thin-film transistors using Si nanomembranes on flexible polymer substrate. Applied Physics Letters, 89 (21). 212105pp. doi:10.1063/1.2397038
Makimoto, Toshiki, Kumakura, Kazuhide, Kobayashi, Naoki (2001) High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base. Applied Physics Letters, 79 (3). 380-381 doi:10.1063/1.1387261
 
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