Hu, W. D., Chen, X. S., Quan, Z. J., Xia, C. S., Lu, W., Yuan, H. J. (2006) Demonstration and dynamic analysis of trapping of hot electrons at gate edge model for current collapse and gate lag in GaN-based high-electron-mobility transistor including self-heating effect. Applied Physics Letters, 89 (24). 243501pp. doi:10.1063/1.2405416
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Demonstration and dynamic analysis of trapping of hot electrons at gate edge model for current collapse and gate lag in GaN-based high-electron-mobility transistor including self-heating effect | ||
| Journal | Applied Physics Letters | ||
| Authors | Hu, W. D. | Author | |
| Chen, X. S. | Author | ||
| Quan, Z. J. | Author | ||
| Xia, C. S. | Author | ||
| Lu, W. | Author | ||
| Yuan, H. J. | Author | ||
| Year | 2006 (December 11) | Volume | 89 |
| Issue | 24 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.2405416Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8551387 | Long-form Identifier | mindat:1:5:8551387:9 |
| GUID | 0 | ||
| Full Reference | Hu, W. D., Chen, X. S., Quan, Z. J., Xia, C. S., Lu, W., Yuan, H. J. (2006) Demonstration and dynamic analysis of trapping of hot electrons at gate edge model for current collapse and gate lag in GaN-based high-electron-mobility transistor including self-heating effect. Applied Physics Letters, 89 (24). 243501pp. doi:10.1063/1.2405416 | ||
| Plain Text | Hu, W. D., Chen, X. S., Quan, Z. J., Xia, C. S., Lu, W., Yuan, H. J. (2006) Demonstration and dynamic analysis of trapping of hot electrons at gate edge model for current collapse and gate lag in GaN-based high-electron-mobility transistor including self-heating effect. Applied Physics Letters, 89 (24). 243501pp. doi:10.1063/1.2405416 | ||
| In | (2006, December) Applied Physics Letters Vol. 89 (24) AIP Publishing | ||
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