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Rossel, C., Mereu, B., Marchiori, C., Caimi, D., Sousa, M., Guiller, A., Siegwart, H., Germann, R., Locquet, J.-P., Fompeyrine, J., Webb, D. J., Dieker, Ch., Seo, Jin Won (2006) Field-effect transistors with SrHfO3 as gate oxide. Applied Physics Letters, 89 (5). 53506pp. doi:10.1063/1.2236464

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Reference TypeJournal (article/letter/editorial)
TitleField-effect transistors with SrHfO3 as gate oxide
JournalApplied Physics Letters
AuthorsRossel, C.Author
Mereu, B.Author
Marchiori, C.Author
Caimi, D.Author
Sousa, M.Author
Guiller, A.Author
Siegwart, H.Author
Germann, R.Author
Locquet, J.-P.Author
Fompeyrine, J.Author
Webb, D. J.Author
Dieker, Ch.Author
Seo, Jin WonAuthor
Year2006 (July 31)Volume89
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.2236464Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8551981Long-form Identifiermindat:1:5:8551981:9
GUID0
Full ReferenceRossel, C., Mereu, B., Marchiori, C., Caimi, D., Sousa, M., Guiller, A., Siegwart, H., Germann, R., Locquet, J.-P., Fompeyrine, J., Webb, D. J., Dieker, Ch., Seo, Jin Won (2006) Field-effect transistors with SrHfO3 as gate oxide. Applied Physics Letters, 89 (5). 53506pp. doi:10.1063/1.2236464
Plain TextRossel, C., Mereu, B., Marchiori, C., Caimi, D., Sousa, M., Guiller, A., Siegwart, H., Germann, R., Locquet, J.-P., Fompeyrine, J., Webb, D. J., Dieker, Ch., Seo, Jin Won (2006) Field-effect transistors with SrHfO3 as gate oxide. Applied Physics Letters, 89 (5). 53506pp. doi:10.1063/1.2236464
In(2006, July) Applied Physics Letters Vol. 89 (5) AIP Publishing

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