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Chen, Y. H., Ye, X. L., Xu, B., Wang, Z. G., Yang, Z. (2006) Large g factors of higher-lying excitons detected with reflectance difference spectroscopy in GaAs-based quantum wells. Applied Physics Letters, 89 (5). 51903pp. doi:10.1063/1.2245213

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Reference TypeJournal (article/letter/editorial)
TitleLarge g factors of higher-lying excitons detected with reflectance difference spectroscopy in GaAs-based quantum wells
JournalApplied Physics Letters
AuthorsChen, Y. H.Author
Ye, X. L.Author
Xu, B.Author
Wang, Z. G.Author
Yang, Z.Author
Year2006 (July 31)Volume89
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.2245213Search in ResearchGate
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Mindat Ref. ID8552008Long-form Identifiermindat:1:5:8552008:2
GUID0
Full ReferenceChen, Y. H., Ye, X. L., Xu, B., Wang, Z. G., Yang, Z. (2006) Large g factors of higher-lying excitons detected with reflectance difference spectroscopy in GaAs-based quantum wells. Applied Physics Letters, 89 (5). 51903pp. doi:10.1063/1.2245213
Plain TextChen, Y. H., Ye, X. L., Xu, B., Wang, Z. G., Yang, Z. (2006) Large g factors of higher-lying excitons detected with reflectance difference spectroscopy in GaAs-based quantum wells. Applied Physics Letters, 89 (5). 51903pp. doi:10.1063/1.2245213
In(2006, July) Applied Physics Letters Vol. 89 (5) AIP Publishing

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Chen, Y. H., Ye, X. L., Wang, J. Z., Wang, Z. G., Yang, Z. (2002) Interface-related in-plane optical anisotropy inGaAs/AlxGa1−xAssingle-quantum-well structures studied by reflectance difference spectroscopy. Physical Review B, 66 (19) doi:10.1103/physrevb.66.195321
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Chen, Y. H., Jin, P., Ye, X. L., Xu, B., Wang, Z. G., Yang, Z. (2006) Optical anisotropy and strain evolution of GaAs surfaces at the onset of the formation of InAs quantum dots. Journal of Applied Physics, 99 (7). 73507pp. doi:10.1063/1.2187419
Chen, Y. H., Wang, Z. G., Qian, J. J., Yang, Z. (2000) Polishing-related optical anisotropy of semi-insulating GaAs studied by reflectance difference spectroscopy. Journal of Applied Physics, 88 (3). 1695-1697 doi:10.1063/1.373874
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