Mikhelashvili, V., Eisenstein, G., Lahav, A. (2007) High capacitance density metal-insulator-metal structure based on Al2O3–HfTiO nanolaminate stacks. Applied Physics Letters, 90 (1). 13506pp. doi:10.1063/1.2425030
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | High capacitance density metal-insulator-metal structure based on Al2O3–HfTiO nanolaminate stacks | ||
| Journal | Applied Physics Letters | ||
| Authors | Mikhelashvili, V. | Author | |
| Eisenstein, G. | Author | ||
| Lahav, A. | Author | ||
| Year | 2007 (January) | Volume | 90 |
| Issue | 1 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.2425030Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8552600 | Long-form Identifier | mindat:1:5:8552600:4 |
| GUID | 0 | ||
| Full Reference | Mikhelashvili, V., Eisenstein, G., Lahav, A. (2007) High capacitance density metal-insulator-metal structure based on Al2O3–HfTiO nanolaminate stacks. Applied Physics Letters, 90 (1). 13506pp. doi:10.1063/1.2425030 | ||
| Plain Text | Mikhelashvili, V., Eisenstein, G., Lahav, A. (2007) High capacitance density metal-insulator-metal structure based on Al2O3–HfTiO nanolaminate stacks. Applied Physics Letters, 90 (1). 13506pp. doi:10.1063/1.2425030 | ||
| In | (2007, January) Applied Physics Letters Vol. 90 (1) AIP Publishing | ||
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