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Lin, Yow-Jon, Chang, Hsing-Cheng, Liu, Bei-Yuan (2007) Effects of (NH4)2Sx treatment on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate). Applied Physics Letters, 90 (11). 112112pp. doi:10.1063/1.2714290

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Reference TypeJournal (article/letter/editorial)
TitleEffects of (NH4)2Sx treatment on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)
JournalApplied Physics Letters
AuthorsLin, Yow-JonAuthor
Chang, Hsing-ChengAuthor
Liu, Bei-YuanAuthor
Year2007 (March 12)Volume90
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.2714290Search in ResearchGate
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Mindat Ref. ID8552932Long-form Identifiermindat:1:5:8552932:0
GUID0
Full ReferenceLin, Yow-Jon, Chang, Hsing-Cheng, Liu, Bei-Yuan (2007) Effects of (NH4)2Sx treatment on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate). Applied Physics Letters, 90 (11). 112112pp. doi:10.1063/1.2714290
Plain TextLin, Yow-Jon, Chang, Hsing-Cheng, Liu, Bei-Yuan (2007) Effects of (NH4)2Sx treatment on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate). Applied Physics Letters, 90 (11). 112112pp. doi:10.1063/1.2714290
In(2007, March) Applied Physics Letters Vol. 90 (11) AIP Publishing

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Lin, Yow-Jon (2008) Hysteresis-type current-voltage characteristics of indium tin oxide/poly (3,4-ethylenedioxythiophene) doped with poly (4-styrenesulfonate)/indium tin oxide devices. Journal of Applied Physics, 103 (6). 63702pp. doi:10.1063/1.2885096
Lin, Yow-Jon, Chu, Yow-Lin, Huang, Y. S., Chang, Hsing-Cheng (2005) Optical and electrical properties of heavily Mg-doped GaN upon (NH4)2Sx treatment. Applied Physics Letters, 86 (20). 202107pp. doi:10.1063/1.1926404
Lin, Yow-Jon, Yang, Fu-Ming, Huang, Chi-Yen, Chou, Wei-Yang, Chang, Jay, Lien, Yi-Chun (2007) Increasing the work function of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) by ultraviolet irradiation. Applied Physics Letters, 91 (9). 92127pp. doi:10.1063/1.2777147
Tsai, Chia-Lung, Lin, Yow-Jon, Wu, Ping-Hsun, Chen, Shu-You, Liu, Day-Shan, Hong, Jia-Huang, Liu, Chia-Jyi, Shih, Yu-Tai, Cheng, Jie-Min, Chang, Hsing-Cheng (2007) Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (NH4)2Sx treatment. Journal of Applied Physics, 101 (11). 113713pp. doi:10.1063/1.2745366
Lin, Yow-Jon, You, Chang-Feng, Tsai, Chia-Lung (2007) Effects of (NH4)2Sx treatment on surface work function and roughness of indium–tin-oxide. Applied Surface Science, 253. 3957-3961 doi:10.1016/j.apsusc.2006.08.032
(2012) Enhancement of the carrier mobility of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) by incorporating reduced graphene oxide. Applied Physics Letters, 101 (5). 53305pp. doi:10.1063/1.4740073
Lee, Yeon-Il, Youn, Jun-Ho, Ryu, Mi-Sun, Kim, Jungho, Jang, Jin, Moon, Hie-Tae (2010) Effect of illumination and annealing on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)/poly(3-hexylthiophene)/Al device. Journal of Applied Physics, 108 (5). 54506pp. doi:10.1063/1.3475645
Koch, N., Vollmer, A., Elschner, A. (2007) Influence of water on the work function of conducting poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate). Applied Physics Letters, 90 (4). 43512pp. doi:10.1063/1.2435350
(2012) Modification of the electrical properties of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) upon doping of ZnO nanoparticles of different content. Journal of Applied Physics, 111 (7). 73712pp. doi:10.1063/1.3702446
(2012) Carrier transport mechanism of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) films by incorporating ZnO nanoparticles. Applied Physics Letters, 100 (25). 253302pp. doi:10.1063/1.4730391
Lin, Yow-Jon, Wang, Zhi-Long, Chang, Hsing-Cheng (2002) Surface band bending, nitrogen-vacancy-related defects, and 2.8-eV photoluminescence band of (NH4)2Sx-treated p-GaN. Applied Physics Letters, 81 (27). 5183-5185 doi:10.1063/1.1533857
 
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