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Schäpers, Th., Guzenko, V. A., Hardtdegen, H. (2007) Zeeman splitting in ballistic GaInAs∕InP split-gate quantum point contacts. Applied Physics Letters, 90 (12). 122107pp. doi:10.1063/1.2715106

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Reference TypeJournal (article/letter/editorial)
TitleZeeman splitting in ballistic GaInAs∕InP split-gate quantum point contacts
JournalApplied Physics Letters
AuthorsSchäpers, Th.Author
Guzenko, V. A.Author
Hardtdegen, H.Author
Year2007 (March 19)Volume90
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.2715106Search in ResearchGate
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Mindat Ref. ID8553000Long-form Identifiermindat:1:5:8553000:7
GUID0
Full ReferenceSchäpers, Th., Guzenko, V. A., Hardtdegen, H. (2007) Zeeman splitting in ballistic GaInAs∕InP split-gate quantum point contacts. Applied Physics Letters, 90 (12). 122107pp. doi:10.1063/1.2715106
Plain TextSchäpers, Th., Guzenko, V. A., Hardtdegen, H. (2007) Zeeman splitting in ballistic GaInAs∕InP split-gate quantum point contacts. Applied Physics Letters, 90 (12). 122107pp. doi:10.1063/1.2715106
In(2007, March) Applied Physics Letters Vol. 90 (12) AIP Publishing

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Guzenko, V. A., Knobbe, J., Hardtdegen, H., Schäpers, Th., Bringer, A. (2006) Rashba effect in InGaAs∕InP parallel quantum wires. Applied Physics Letters, 88 (3). 32102pp. doi:10.1063/1.2165279
Schäpers, Th., Appenzeller, J., Hardtdegen, H., Lüth, H. (1998) Observation of quantized conductance in split-gate In0.53Ga0.47As/In0.77Ga0.23As/InP point contacts using Cr/Au p-InP Schottky barriers. Journal of Applied Physics, 83 (4). 2360-2362 doi:10.1063/1.366979
Guzenko, V.A., Bringer, A., Knobbe, J., Hardtdegen, H., Schäpers, Th. (2007) Rashba effect in GaxIn1-xAs/InP quantum wire structures. Applied Physics A, 87. 577-584 doi:10.1007/s00339-007-3899-7
Thillosen, N., Schäpers, Th., Kaluza, N., Hardtdegen, H., Guzenko, V. A. (2006) Weak antilocalization in a polarization-doped AlxGa1−xN∕GaN heterostructure with single subband occupation. Applied Physics Letters, 88 (2). 22111pp. doi:10.1063/1.2162871
Thillosen, N., Cabañas, S., Kaluza, N., Guzenko, V. A., Hardtdegen, H., Schäpers, Th. (2006) Weak antilocalization in gate-controlledAlxGa1−xN∕GaNtwo-dimensional electron gases. Physical Review B, 73 (24) doi:10.1103/physrevb.73.241311
Schäpers, Th., Müller, R. P., Kaluza, A., Hardtdegen, H., Lüth, H. (1999) Adjustment of the critical current in a Nb–InxGa1−xAs/InP Josephson contact by light exposure. Applied Physics Letters, 75 (3). 391-393 doi:10.1063/1.124385
Schäpers, Th., Guzenko, V. A., Pala, M. G., Zülicke, U., Governale, M., Knobbe, J., Hardtdegen, H. (2006) Suppression of weak antilocalization inGaxIn1−xAs∕InPnarrow quantum wires. Physical Review B, 74 (8) doi:10.1103/physrevb.74.081301
Schäpers, Th., Thillosen, N., Cabañas, S., Kaluza, N., Guzenko, V. A., Hardtdegen, H. (2006) Spin-orbit coupling in gated AlGaN/GaN 2-dimensional electron gases. physica status solidi (c), 3 (12). 4247-4250 doi:10.1002/pssc.200672807
Cabañas, S., Schäpers, Th., Thillosen, N., Kaluza, N., Guzenko, V. A., Hardtdegen, H. (2007) Suppression of weak antilocalization in anAlxGa1−xN∕GaNtwo-dimensional electron gas by an in-plane magnetic field. Physical Review B, 75 (19) doi:10.1103/physrevb.75.195329
Camino, F. E., Kuznetsov, V. V., Mendez, E. E., Schäpers, Th., Guzenko, V. A., Hardtdegen, H. (2005) Shot noise of large charge quanta in superconductor/semiconductor/superconductor junctions. Physical Review B, 71 (2) doi:10.1103/physrevb.71.020506
Schäpers, Th., Kaluza, A., Neurohr, K., Malindretos, J., Crecelius, G., van der Hart, A., Hardtdegen, H., Lüth, H. (1997) Josephson effect in Nb/two-dimensional electron gas structures using a pseudomorphic InxGa1−xAs/InP heterostructure. Applied Physics Letters, 71 (24). 3575-3577 doi:10.1063/1.120410
 
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