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Hirai, A., Haskell, B. A., McLaurin, M. B., Wu, F., Schmidt, M. C., Kim, K. C., Baker, T. J., DenBaars, S. P., Nakamura, S., Speck, J. S. (2007) Defect-mediated surface morphology of nonpolar m-plane GaN. Applied Physics Letters, 90 (12). 121119pp. doi:10.1063/1.2715126

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Reference TypeJournal (article/letter/editorial)
TitleDefect-mediated surface morphology of nonpolar m-plane GaN
JournalApplied Physics Letters
AuthorsHirai, A.Author
Haskell, B. A.Author
McLaurin, M. B.Author
Wu, F.Author
Schmidt, M. C.Author
Kim, K. C.Author
Baker, T. J.Author
DenBaars, S. P.Author
Nakamura, S.Author
Speck, J. S.Author
Year2007 (March 19)Volume90
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.2715126Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8553012Long-form Identifiermindat:1:5:8553012:2
GUID0
Full ReferenceHirai, A., Haskell, B. A., McLaurin, M. B., Wu, F., Schmidt, M. C., Kim, K. C., Baker, T. J., DenBaars, S. P., Nakamura, S., Speck, J. S. (2007) Defect-mediated surface morphology of nonpolar m-plane GaN. Applied Physics Letters, 90 (12). 121119pp. doi:10.1063/1.2715126
Plain TextHirai, A., Haskell, B. A., McLaurin, M. B., Wu, F., Schmidt, M. C., Kim, K. C., Baker, T. J., DenBaars, S. P., Nakamura, S., Speck, J. S. (2007) Defect-mediated surface morphology of nonpolar m-plane GaN. Applied Physics Letters, 90 (12). 121119pp. doi:10.1063/1.2715126
In(2007, March) Applied Physics Letters Vol. 90 (12) AIP Publishing

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Kim, Kwang-Choong, Schmidt, Mathew C., Wu, Feng, McLaurin, Melvin B., Hirai, Asako, Nakamura, Shuji, DenBaars, Steven P., Speck, James S. (2008) Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth. Applied Physics Letters, 93 (14). 142108pp. doi:10.1063/1.2908978
Haskell, B. A., Baker, T. J., McLaurin, M. B., Wu, F., Fini, P. T., DenBaars, S. P., Speck, J. S., Nakamura, Shuji (2005) Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy. Applied Physics Letters, 86 (11). 111917pp. doi:10.1063/1.1866225
Hirai, A., Jia, Z., Schmidt, M. C., Farrell, R. M., DenBaars, S. P., Nakamura, S., Speck, J. S., Fujito, K. (2007) Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN. Applied Physics Letters, 91 (19). 191906pp. doi:10.1063/1.2802570
Sharma, R., Pattison, P. M., Masui, H., Farrell, R. M., Baker, T. J., Haskell, B. A., Wu, F., DenBaars, S. P., Speck, J. S., Nakamura, S. (2005) Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode. Applied Physics Letters, 87 (23). 231110pp. doi:10.1063/1.2139841
Chakraborty, Arpan, Haskell, B. A., Keller, S., Speck, J. S., DenBaars, S. P., Nakamura, S., Mishra, U. K. (2004) Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak. Applied Physics Letters, 85 (22). 5143-5145 doi:10.1063/1.1825612
Koyama, T., Onuma, T., Masui, H., Chakraborty, A., Haskell, B. A., Keller, S., Mishra, U. K., Speck, J. S., Nakamura, S., DenBaars, S. P., Sota, T., Chichibu, S. F. (2006) Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates. Applied Physics Letters, 89 (9). 91906pp. doi:10.1063/1.2337085
Chakraborty, Arpan, Kim, K. C., Wu, F., Speck, J. S., DenBaars, S. P., Mishra, U. K. (2006) Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask. Applied Physics Letters, 89 (4). 41903pp. doi:10.1063/1.2234841
Haskell, B. A., Wu, F., Craven, M. D., Matsuda, S., Fini, P. T., Fujii, T., Fujito, K., DenBaars, S. P., Speck, J. S., Nakamura, Shuji (2003) Defect reduction in (112Ì„0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy. Applied Physics Letters, 83 (4). 644-646 doi:10.1063/1.1593817
Law, J. J. M., Yu, E. T., Haskell, B. A., Fini, P. T., Nakamura, S., Speck, J. S., DenBaars, S. P. (2008) Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy. Journal of Applied Physics, 103 (1). 14305pp. doi:10.1063/1.2828161
Koida, T., Chichibu, S. F., Sota, T., Craven, M. D., Haskell, B. A., Speck, J. S., DenBaars, S. P., Nakamura, S. (2004) Improved quantum efficiency in nonpolar (112Ì„0) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth. Applied Physics Letters, 84 (19). 3768-3770 doi:10.1063/1.1738185
Farrell, R. M., Haeger, D. A., Hsu, P. S., Schmidt, M. C., Fujito, K., Feezell, D. F., DenBaars, S. P., Speck, J. S., Nakamura, S. (2011) High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes. Applied Physics Letters, 99 (17). 171113pp. doi:10.1063/1.3656970
 
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