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Akasaka, Tetsuya, Kobayashi, Yasuyuki, Makimoto, Toshiki (2007) Growth of nonpolar AlN (112¯0) and (11¯00) films on SiC substrates by flow-rate modulation epitaxy. Applied Physics Letters, 90 (12). 121919pp. doi:10.1063/1.2716207

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of nonpolar AlN (112¯0) and (11¯00) films on SiC substrates by flow-rate modulation epitaxy
JournalApplied Physics Letters
AuthorsAkasaka, TetsuyaAuthor
Kobayashi, YasuyukiAuthor
Makimoto, ToshikiAuthor
Year2007 (March 19)Volume90
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.2716207Search in ResearchGate
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Mindat Ref. ID8553040Long-form Identifiermindat:1:5:8553040:5
GUID0
Full ReferenceAkasaka, Tetsuya, Kobayashi, Yasuyuki, Makimoto, Toshiki (2007) Growth of nonpolar AlN (112¯0) and (11¯00) films on SiC substrates by flow-rate modulation epitaxy. Applied Physics Letters, 90 (12). 121919pp. doi:10.1063/1.2716207
Plain TextAkasaka, Tetsuya, Kobayashi, Yasuyuki, Makimoto, Toshiki (2007) Growth of nonpolar AlN (112¯0) and (11¯00) films on SiC substrates by flow-rate modulation epitaxy. Applied Physics Letters, 90 (12). 121919pp. doi:10.1063/1.2716207
In(2007, March) Applied Physics Letters Vol. 90 (12) AIP Publishing

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Akasaka, Tetsuya, Kobayashi, Yasuyuki, Makimoto, Toshiki (2007) Nonpolar AlBN (112¯0) and (11¯00) films grown on SiC substrates. Applied Physics Letters, 91 (4). 41914pp. doi:10.1063/1.2766665
Akasaka, Tetsuya, Kobayashi, Yasuyuki, Kasu, Makoto (2008) Anisotropic in-plane strains in nonpolar AlN and AlGaN (112¯0) films grown on SiC (112¯0) substrates. Applied Physics Letters, 93 (16). 161908pp. doi:10.1063/1.2995994
Akasaka, Tetsuya, Makimoto, Toshiki (2006) Flow-rate modulation epitaxy of wurtzite AlBN. Applied Physics Letters, 88 (4). 41902pp. doi:10.1063/1.2164900
Kobayashi, Yasuyuki, Hibino, Hiroki, Nakamura, Tomohiro, Akasaka, Tetsuya, Makimoto, Toshiki, Matsumoto, Nobuo (2007) Boron Nitride Thin Films Grown on Graphitized 6H–SiC Substrates by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 46 (4) 2554-2557 doi:10.1143/jjap.46.2554
Kobayashi, Yasuyuki, Makimoto, Toshiki (2006) Growth of Boron Nitride on 6H–SiC Substrate by Flow-Rate Modulation Epitaxy. Japanese Journal of Applied Physics, 45 (4) 3519-3521 doi:10.1143/jjap.45.3519
Akasaka, Tetsuya, Gotoh, Hideki, Kobayashi, Yasuyuki, Nakano, Hidetoshi, Makimoto, Toshiki (2006) InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers. Applied Physics Letters, 89 (10). 101110pp. doi:10.1063/1.2347115
Akasaka, Tetsuya, Kobayashi, Yasuyuki, Makimoto, Toshiki (2007) BGaN micro-islands as novel buffers for growth of high-quality GaN on sapphire. Journal of Crystal Growth, 298. 320-324 doi:10.1016/j.jcrysgro.2006.10.033
Kobayashi, Naoki, Makimoto, Toshiki, Horikoshi, Yoshiji (1987) Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy. Applied Physics Letters, 50 (20). 1435-1437 doi:10.1063/1.97846
Kobayashi, Naoki, Makimoto, Toshiki, Yamauchi, Yoshiharu, Horikoshi, Yoshiji (1989) Flow‐rate modulation epitaxy of GaAs and AlGaAs. Journal of Applied Physics, 66 (2). 640-651 doi:10.1063/1.343531
Nishikawa, Atsushi, Kumakura, Kazuhide, Akasaka, Tetsuya, Makimoto, Toshiki (2005) Current-voltage characteristics of p‐InGaN∕n‐GaN vertical conducting diodes on n+‐SiC substrates. Applied Physics Letters, 87 (23). 233505pp. doi:10.1063/1.2140483
Makimoto, Toshiki, Kobayashi, Naoki, Horikoshi, Yoshiji (1986) Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l513
 
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