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Suresh, Arun, Wellenius, Patrick, Dhawan, Anuj, Muth, John (2007) Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors. Applied Physics Letters, 90 (12). 123512pp. doi:10.1063/1.2716355

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Reference TypeJournal (article/letter/editorial)
TitleRoom temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors
JournalApplied Physics Letters
AuthorsSuresh, ArunAuthor
Wellenius, PatrickAuthor
Dhawan, AnujAuthor
Muth, JohnAuthor
Year2007 (March 19)Volume90
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.2716355Search in ResearchGate
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Mindat Ref. ID8553054Long-form Identifiermindat:1:5:8553054:8
GUID0
Full ReferenceSuresh, Arun, Wellenius, Patrick, Dhawan, Anuj, Muth, John (2007) Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors. Applied Physics Letters, 90 (12). 123512pp. doi:10.1063/1.2716355
Plain TextSuresh, Arun, Wellenius, Patrick, Dhawan, Anuj, Muth, John (2007) Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors. Applied Physics Letters, 90 (12). 123512pp. doi:10.1063/1.2716355
In(2007, March) Applied Physics Letters Vol. 90 (12) AIP Publishing

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Suresh, A., Muth, J. F. (2008) Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors. Applied Physics Letters, 92 (3). 33502pp. doi:10.1063/1.2824758
Suresh, Arun, Novak, Steven, Wellenius, Patrick, Misra, Veena, Muth, John F. (2009) Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric. Applied Physics Letters, 94 (12). 123501pp. doi:10.1063/1.3106629
Wellenius, P., Suresh, A., Muth, J. F. (2008) Bright, low voltage europium doped gallium oxide thin film electroluminescent devices. Applied Physics Letters, 92 (2). 21111pp. doi:10.1063/1.2824846
Wang, Yu-Lin, Ren, F., Lim, Wantae, Norton, D. P., Pearton, S. J., Kravchenko, I. I., Zavada, J. M. (2007) Room temperature deposited indium zinc oxide thin film transistors. Applied Physics Letters, 90 (23). 232103pp. doi:10.1063/1.2746084
Song, Ju-Il, Park, Jae-Soung, Kim, Howoon, Heo, Young-Woo, Lee, Joon-Hyung, Kim, Jeong-Joo, Kim, G. M., Choi, Byeong Dae (2007) Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature. Applied Physics Letters, 90 (2). 22106pp. doi:10.1063/1.2430917
Zhang, X. Y., Dhawan, A., Wellenius, P., Suresh, A., Muth, J. F. (2007) Planar ZnO ultraviolet modulator. Applied Physics Letters, 91 (7). 71107pp. doi:10.1063/1.2770995
Ahn, Min-Ju, Cho, Won-Ju (2016) Transparent multi-level-cell nonvolatile memory with dual-gate amorphous indium-gallium-zinc oxide thin-film transistors. Applied Physics Letters, 109 (25). 252106pp. doi:10.1063/1.4972961
Sarkar, Smita, Suresh, Arun, Myers, Frank B., Muth, John F., Misra, Veena (2008) Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric. Applied Physics Letters, 92 (22). 223304pp. doi:10.1063/1.2918981
Kang, Donghun, Lim, Hyuck, Kim, Changjung, Song, Ihun, Park, Jaechoel, Park, Youngsoo, Chung, JaeGwan (2007) Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules. Applied Physics Letters, 90 (19). 192101pp. doi:10.1063/1.2723543
Zan, Hsiao-Wen, Li, Chang-Hung, Yeh, Chun-Cheng, Dai, Ming-Zhi, Meng, Hsin-Fei, Tsai, Chuang-Chuang (2011) Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors. Applied Physics Letters, 98 (25). 253503pp. doi:10.1063/1.3601488
Jeong, Jae Kyeong, Jeong, Jong Han, Yang, Hui Won, Park, Jin-Seong, Mo, Yeon-Gon, Kim, Hye Dong (2007) High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel. Applied Physics Letters, 91 (11). 113505pp. doi:10.1063/1.2783961
 
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