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Jiang, A. Q., Lin, Y. Y., Tang, T. A., Zhang, Q. (2007) Asymmetry of domain forward switching and multilevel relaxation times of domain backswitching in antiferroelectric Pb0.99Nb0.02(Zr0.84Sn0.12Ti0.04)0.98O3 thin films. Applied Physics Letters, 90 (14). 142901pp. doi:10.1063/1.2718506

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Reference TypeJournal (article/letter/editorial)
TitleAsymmetry of domain forward switching and multilevel relaxation times of domain backswitching in antiferroelectric Pb0.99Nb0.02(Zr0.84Sn0.12Ti0.04)0.98O3 thin films
JournalApplied Physics Letters
AuthorsJiang, A. Q.Author
Lin, Y. Y.Author
Tang, T. A.Author
Zhang, Q.Author
Year2007 (April 2)Volume90
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.2718506Search in ResearchGate
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Mindat Ref. ID8553205Long-form Identifiermindat:1:5:8553205:0
GUID0
Full ReferenceJiang, A. Q., Lin, Y. Y., Tang, T. A., Zhang, Q. (2007) Asymmetry of domain forward switching and multilevel relaxation times of domain backswitching in antiferroelectric Pb0.99Nb0.02(Zr0.84Sn0.12Ti0.04)0.98O3 thin films. Applied Physics Letters, 90 (14). 142901pp. doi:10.1063/1.2718506
Plain TextJiang, A. Q., Lin, Y. Y., Tang, T. A., Zhang, Q. (2007) Asymmetry of domain forward switching and multilevel relaxation times of domain backswitching in antiferroelectric Pb0.99Nb0.02(Zr0.84Sn0.12Ti0.04)0.98O3 thin films. Applied Physics Letters, 90 (14). 142901pp. doi:10.1063/1.2718506
In(2007, April) Applied Physics Letters Vol. 90 (14) AIP Publishing

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Jiang, A. Q., Lin, Y. Y., Tang, T. A. (2007) Interfacial-layer modulation of domain switching current in ferroelectric thin films. Journal of Applied Physics, 101 (10). 104105pp. doi:10.1063/1.2733640
Jiang, A. Q., Lin, Y. Y., Tang, T. A. (2006) Coexisting depinning effect of domain walls during the fatigue in ferroelectric thin films. Applied Physics Letters, 89 (3). 32906pp. doi:10.1063/1.2227626
Jiang, A. Q., Fei, J. W., Lin, Y. Y., Tang, T. A. (2008) Formulization of long-time domain switching around the coercive field from imprint measurements on ferroelectric thin films. Journal of Applied Physics, 103 (12). 124112pp. doi:10.1063/1.2948931
Jiang, A. Q., Tang, T. A., Corkovic, S., Zhang, Q. (2008) Reversible charge injection in antiferroelectric thin films. Applied Physics Letters, 93 (21). 212908pp. doi:10.1063/1.3039073
Jiang, A. Q., Lin, Y. Y., Tang, T. A. (2007) Charge injection and polarization fatigue in ferroelectric thin films. Journal of Applied Physics, 102 (7). 74109pp. doi:10.1063/1.2786886
Jiang, A. Q., Lin, Y. Y., Tang, T. A. (2007) Evaluation of interfacial-layer capacitance from fast polarization retention in ferroelectric thin films. Journal of Applied Physics, 101 (5). 56103pp. doi:10.1063/1.2436921
Jiang, J., Meng, X. J., Geng, D. Q., Jiang, A. Q. (2015) Accelerated domain switching speed in single-crystal LiNbO3 thin films. Journal of Applied Physics, 117 (10). 104101pp. doi:10.1063/1.4914483
Jiang, A. Q., Yu, H. H., Tang, T. A. (2009) Evidence of nanosecond-scale charge injection during domain switching from fast imprint measurements in Pb(Zr,Ti)O3 thin films at low temperatures. Applied Physics Letters, 94 (20). 202904pp. doi:10.1063/1.3139771
Bharadwaja, S. S. N., Krupanidhi, S. B. (2000) Field-induced dielectric properties of laser ablated antiferroelectric (Pb0.99Nb0.02)(Zr0.57Sn0.38Ti0.05)0.98O3 thin films. Applied Physics Letters, 77 (25). 4208-4210 doi:10.1063/1.1332977
Jiang, A. Q., Lin, Y. Y., Tang, T. A. (2007) The growth of interfacial passive layers under thermal passivation of integrated Pb(Zr,Ti)O3 thin films. Journal of Applied Physics, 102 (7). 74118pp. doi:10.1063/1.2795572
Jiang, A. Q., Zhang, D. W., Tang, T. A. (2013) Nonlinear antiferroelectric-like capacitance-voltage curves in ferroelectric BiFeO3 thin films. Journal of Applied Physics, 114 (2). 27009pp. doi:10.1063/1.4812217
 
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