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Lee, Y. J., Lin, P. C., Lu, T. C., Kuo, H. C., Wang, S. C. (2007) Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes. Applied Physics Letters, 90 (16). 161115pp. doi:10.1063/1.2722672

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Reference TypeJournal (article/letter/editorial)
TitleDichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes
JournalApplied Physics Letters
AuthorsLee, Y. J.Author
Lin, P. C.Author
Lu, T. C.Author
Kuo, H. C.Author
Wang, S. C.Author
Year2007 (April 16)Volume90
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.2722672Search in ResearchGate
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Mindat Ref. ID8553459Long-form Identifiermindat:1:5:8553459:9
GUID0
Full ReferenceLee, Y. J., Lin, P. C., Lu, T. C., Kuo, H. C., Wang, S. C. (2007) Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes. Applied Physics Letters, 90 (16). 161115pp. doi:10.1063/1.2722672
Plain TextLee, Y. J., Lin, P. C., Lu, T. C., Kuo, H. C., Wang, S. C. (2007) Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes. Applied Physics Letters, 90 (16). 161115pp. doi:10.1063/1.2722672
In(2007, April) Applied Physics Letters Vol. 90 (16) AIP Publishing

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