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Suh, Dong-Seok, Lee, Eunhye, Kim, Kijoon H. P., Noh, Jin-Seo, Shin, Woong-Chul, Kang, Youn-Seon, Kim, Cheolkyu, Khang, Yoonho, Yoon, H. R., Jo, W. (2007) Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications. Applied Physics Letters, 90 (2). 23101pp. doi:10.1063/1.2430481

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Reference TypeJournal (article/letter/editorial)
TitleNonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications
JournalApplied Physics Letters
AuthorsSuh, Dong-SeokAuthor
Lee, EunhyeAuthor
Kim, Kijoon H. P.Author
Noh, Jin-SeoAuthor
Shin, Woong-ChulAuthor
Kang, Youn-SeonAuthor
Kim, CheolkyuAuthor
Khang, YoonhoAuthor
Yoon, H. R.Author
Jo, W.Author
Year2007 (January 8)Volume90
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.2430481Search in ResearchGate
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Mindat Ref. ID8554025Long-form Identifiermindat:1:5:8554025:3
GUID0
Full ReferenceSuh, Dong-Seok, Lee, Eunhye, Kim, Kijoon H. P., Noh, Jin-Seo, Shin, Woong-Chul, Kang, Youn-Seon, Kim, Cheolkyu, Khang, Yoonho, Yoon, H. R., Jo, W. (2007) Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications. Applied Physics Letters, 90 (2). 23101pp. doi:10.1063/1.2430481
Plain TextSuh, Dong-Seok, Lee, Eunhye, Kim, Kijoon H. P., Noh, Jin-Seo, Shin, Woong-Chul, Kang, Youn-Seon, Kim, Cheolkyu, Khang, Yoonho, Yoon, H. R., Jo, W. (2007) Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications. Applied Physics Letters, 90 (2). 23101pp. doi:10.1063/1.2430481
In(2007, January) Applied Physics Letters Vol. 90 (2) AIP Publishing

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